60R360P Datasheet | Specifications & PDF Download

MMP60R360P Datasheet MMP60R360P 600V 0.36Ω N-channel MOSFET  Description MMP60R360P is power MOSFET using magnachip’s advanced super junction techno

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MMD60R360P Datasheet MMD60R360P 600V 0.38Ω N-channel MOSFET  Description MMD60R360P is power MOSFET using Magnachip’s advanced super junction techn

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MMF60R360P Datasheet MMF60R360P 600V 0.36Ω N-channel MOSFET  Description MMF60R360P is power MOSFET using magnachip’s advanced super junction techno

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IPN60R360PFD7S MOSFET 600V CoolMOSª PFD7 SJ Power Device CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to

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isc N-Channel MOSFET Transistor MMD60R360P ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.38Ω ·100% avalanche tested ·Minimum Lot-to-Lot va

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MMP60R360P Datasheet MMP60R360P 600V 0.36Ω N-channel MOSFET  Description MMP60R360P is power MOSFET using magnachip’s advanced super junction techno

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IPAW60R360P7S MOSFET 600V CoolMOSª P7 Power Transistor The CoolMOS™ 7th generation platform is a revolutionary technology for high voltage power MOSF

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IPA60R360P7 MOSFET 600V CoolMOSª P7 Power Device The CoolMOS™ 7th generation platform is a revolutionary technology for high voltage power MOSFETs, d

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IPD60R360P7S MOSFET 600V CoolMOSª P7 Power Transistor The CoolMOS™ 7th generation platform is a revolutionary technology for high voltage power MOSFE

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IPA60R360P7S MOSFET 600V CoolMOSª P7 Power Device The CoolMOS™ 7th generation platform is a revolutionary technology for high voltage power MOSFETs,

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPP60R360P7，IIPP60R360P7 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.36Ω ·Enhanc

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IPD60R360P7 MOSFET 600V CoolMOSª P7 Power Device The CoolMOS™ 7th generation platform is a revolutionary technology for high voltage power MOSFETs, d

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isc N-Channel MOSFET Transistor IPD60R360P7,IIPD60R360P7 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.36Ω ·Enhancement mode: ·100% avalanc

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MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ P6 600V CoolMOS™ P6 Power Transistor IPL60R360P6S Data Sheet Rev. 2.0 Final Power Ma

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isc N-Channel MOSFET Transistor IPD60R360P7S,IIPD60R360P7S ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.36Ω ·Enhancement mode: ·100% avala

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IPLK60R360PFD7 MOSFET 600V CoolMOSª PFD7 SJ Power Device CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to

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IPP60R360P7 MOSFET 600V CoolMOSª P7 Power Transistor The CoolMOS™ 7th generation platform is a revolutionary technology for high voltage power MOSFET

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isc N-Channel MOSFET Transistor IPA60R360P7 ·FEATURES · Drain-source on-resistance: RDS(on) ≤ 0.36Ω ·Enhancement mode ·Fast Switching Speed ·100% av

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IPB60R360P7 MOSFET 600V CoolMOSª P7 Power Transistor The CoolMOS™ 7th generation platform is a revolutionary technology for high voltage power MOSFET

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