60S1 Datasheet | Specifications & PDF Download

FMP20N60S1 Super J-MOS series http://www.fujielectric.com/products/semiconductor/ FUJI POWER MOSFET N-Channel enhancement mode power MOSFET 2.7 ±0.1

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NP60S10D6 100V N-Channel Enhancement Mode MOSFET Description Schematic diagram The NP60S10D6 uses SGT technology that is uniquely optimized to prov

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www.DataSheet.co.kr GA200HS60S1PbF Vishay High Power Products Half-Bridge IGBT INT-A-PAK (Standard Speed IGBT), 200 A FEATURES • Generation 4 IGBT

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JANUARY 2014 MMD160S 160A Rectifier Diode Module Version 03 RoHS Compliant FEATURES □ Low Forward Voltage □ High Surge Current Capability □ Low L

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JANUARY 2014 MMD160S 160A Rectifier Diode Module Version 03 RoHS Compliant FEATURES □ Low Forward Voltage □ High Surge Current Capability □ Low L

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MD160S-M3 RoHS COMPLIANT Glass Passivated Three Phase Rectifier Bridge VRRM 800 to 1800V ID 160 A Circuit + ~~~ - Module Type TYPE MD160S08M3 MD160

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NGTG15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Non−Punch Through (NPT) T

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NGTB50N60S1WG IGBT - Inverter Welding This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and pro

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MD160S-M3 RoHS COMPLIANT Glass Passivated Three Phase Rectifier Bridge VRRM 800 to 1800V ID 160 A Circuit + ~~~ - Module Type TYPE MD160S08M3 MD160

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JANUARY 2014 MMD160S 160A Rectifier Diode Module Version 03 RoHS Compliant FEATURES □ Low Forward Voltage □ High Surge Current Capability □ Low L

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D. IMENSION （ UNIT ：mm） CIRCUIT DIAGRAM SMW7060S701NTT A 7.0±0.5 B 6.0±0.5 C 3.8Max D 3.5Typ E 1.5±0.2 F 1.5±0.2 G 1.75±0.2 ELECTRICAL

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www.DataSheet.co.kr Bulletin I27222 03/06 GA200HS60S1 HALF-BRIDGE IGBT INT-A-PAK Features • Generation 4 IGBT Technology • Standard speed: optimiz

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FMV20N60S1 Super J-MOS series http://www.fujielectric.com/products/semiconductor/ FUJI POWER MOSFET N-Channel enhancement mode power MOSFET Features

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Green SDM160S1F 1A SCHOTTKY Product Summary VRRM (V) 60 IO (A) 1 VF Max (V) @ +25°C 0.53 IR Max (mA) @ +25°C 0.06 Features and Benefits  Guard

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GLASS PASSIVATED7+5((3+$6( RECTIFIER %5,'*( M2D6618 VOLTAGE RANGE CURRENT 800 to 1800V  Ampere Applications     Three phase rectifiers f

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JANUARY 2014 MMD160S 160A Rectifier Diode Module Version 03 RoHS Compliant FEATURES □ Low Forward Voltage □ High Surge Current Capability □ Low L

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JANUARY 2014 MMD160S 160A Rectifier Diode Module Version 03 RoHS Compliant FEATURES □ Low Forward Voltage □ High Surge Current Capability □ Low L

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NP260S10LL 100V N-Channel Enhancement Mode MOSFET Description Schematic diagram The NP260S10LL uses advanced trench technology to provide excellent

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1,800 V Rectifiers 250 mA Forward Current 70 ns - 3000 ns Recovery Time MD60U18 MD60S18 ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS Part Number W

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MD160S-M3 RoHS COMPLIANT Glass Passivated Three Phase Rectifier Bridge VRRM 800 to 1800V ID 160 A Circuit + ~~~ - Module Type TYPE MD160S08M3 MD160

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