.
ON Semiconductor
NGTB45N60S1WG - IGBT
NGTB45N60S1WG IGBT - Inverter Welding This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and pro.
Fuji Electric
20N60S1 - N-Channel enhancement mode power MOSFET
FMP20N60S1 Super J-MOS series http://www.fujielectric.com/products/semiconductor/ FUJI POWER MOSFET N-Channel enhancement mode power MOSFET 2.7 ±0.1.
Fuji Electric
FMW20N60S1HF - N-CHANNEL SILICON POWER MOSFET
www.DataSheet.co.kr http://www.fujielectric.com/products/semiconductor/ FMW20N60S1HF Super J-MOS series Features Low on-state resistance Low switchi.
Fuji Electric
FMP30N60S1 - N-Channel enhancement mode power MOSFET
FMP30N60S1 Super J-MOS series http://www.fujielectric.com/products/semiconductor/ FUJI POWER MOSFET N-Channel enhancement mode power MOSFET 2.7 ±0.1.
Fuji Electric
FMV20N60S1FD - N-Channel enhancement mode power MOSFET
FMV20N60S1FD http://www.fujielectric.com/products/semiconductor/ FUJI POWER MOSFET Super J-MOS series N-Channel enhancement mode power MOSFET Feat.
Truesemi
TSP60R460S1 - N-Channel MOSFET
TSP60R460S1 600V 9.5A N-Channel SJ-MOSFET TSP60R460S1 600V 9.5A N-Channel SJ-MOSFET General Description Truesemi SJ-FET is new generation of high vo.
Fuji Electric
FMH20N60S1 - N-CHANNEL SILICON POWER MOSFET
FMH20N60S1 Super J-MOS series http://www.fujielectric.com/products/semiconductor/ FUJI POWER MOSFET N-Channel enhancement mode power MOSFET Features.
ON Semiconductor
NGTB15N60S1EG - IGBT
NGTB15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Non−Punch Through (NPT) T.
ON Semiconductor
NGTG15N60S1EG - IGBT
NGTG15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Non−Punch Through (NPT) T.
Fuji Electric
FMH47N60S1 - N-Channel enhancement mode power MOSFET
FMH47N60S1 Super J-MOS series http://www.fujielectric.com/products/semiconductor/ FUJI POWER MOSFET N-Channel enhancement mode power MOSFET Features.
Panasonic
AGN260S1H - GN RELAYS
Automation Controls Catalog High sensitivity, 100 mW GN RELAYS (AGN) Nominal operating power, 2 Form C and 1 A Slim body type relays FEATURES 1. Sli.
Panasonic
AGN260S12 - GN RELAYS
Automation Controls Catalog High sensitivity, 100 mW GN RELAYS (AGN) Nominal operating power, 2 Form C and 1 A Slim body type relays FEATURES 1. Sli.
SemiSouth
SDP60S120D - Silicon Carbide Power Schottky Diode
Silicon Carbide Power Schottky Diode Features: - Positive Temperature Coefficient for Ease of Paralleling - Temperature Independent Switching Behavior.
Infineon
60S1K0CE - MOSFET
IPD60R1K0CE,IPU60R1K0CE MOSFET 600VCoolMOSªCEPowerTransistor CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedacc.
Diodes
SDM160S1F - SCHOTTKY
Green SDM160S1F 1A SCHOTTKY Product Summary VRRM (V) 60 IO (A) 1 VF Max (V) @ +25°C 0.53 IR Max (mA) @ +25°C 0.06 Features and Benefits Guard .
Diodes
SDM160S1FQ - SCHOTTKY
Green SDM160S1FQ 1A SCHOTTKY Product Summary VRRM (V) 60 IO (A) 1 VF Max (V) @ +25°C 0.53 IR Max (mA) @ +25°C 0.06 Description and Applications .
Truesemi
TSD60R460S1 - N-Channel MOSFET
TSD60R460S1 600V 9.5A N-Channel SJ-MOSFET TSD60R460S1 600V 9.5A N-Channel SJ-MOSFET General Description Truesemi SJ-FET is new generation of high vo.
Truesemi
TSF60R460S1 - N-Channel MOSFET
TSF60R460S1 600V 9.5A N-Channel SJ-MOSFET TSF60R460S1 600V 9.5A N-Channel SJ-MOSFET General Description Truesemi SJ-FET is new generation of high vo.
Diodes
SBR0560S1Q - SUPER BARRIER RECTIFIER
Product Summary (@TA= +25°C) VRRM (V) 60 IO (A) 0.5 VF MAX (V) 0.5 IR MAX (µA) 100 Applications SMPS DC-DC Converter Freewheeling Diodes .
Diodes
SBR0560S1 - SUPER BARRIER RECTIFIER
NEW PRODUCT Features • Low Forward Voltage Drop • Low Reverse Leakage • Excellent High Temperature Stability • Patented Super Barrier Rectifier Techn.
