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60T TRIACs

SEMICONDUCTOR 60T Series RRooHHSS TRIACs, 60A Sn.

Infineon Technologies

K30T60 - IKW30N60T

IKW30N60T TRENCHSTOP™ Series q Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Contr.
Rating: 1 (7 votes)
CR Micro

CRM60TA03E1 - 600V 3A 3-phase IPM

CRM60TA03E1 () 600V 3A 3-phase Integrated Power Modules Description CRM60TA03E1 is 3-phase Integrated Power Modules (IPM) designed for advanced ap.
Rating: 1 (6 votes)
Advanced Power Electronics

60T03GH - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP60T03GH/J RoHS-compliant Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Low Gate Charge ▼ Fast Switching ▼ RoHS Compliant G .
Rating: 1 (5 votes)
ON Semiconductor

NDT01N60T1G - N-Channel Power MOSFET

NDD01N60, NDT01N60 N-Channel Power MOSFET 600 V, 8.5 W Features • 100% Avalanche Tested • These Devices are Pb-Free, Halogen Free/BFR Free and are Ro.
Rating: 1 (5 votes)
Fairchild Semiconductor

FNB33060T - Motion SPM 3 module

FNB33060T Motion SPM 3 ® Series March 2016 FNB33060T Motion SPM® 3 Series Features • 600 V - 30 A 3-Phase IGBT Inverter with Integral Gate Drivers .
Rating: 1 (5 votes)
AP Semiconductor

AD2060T - 60V 20A Ultra Low VF Schottky

AD2060T 60V 20A Ultra Low VF Schottky Characteristics Summary Characteristics Values IF(AV) 20 VRRM VF @ 10A, TJ = 25℃ TJ, Operating Junction T.
Rating: 1 (5 votes)
ON Semiconductor

FGY60T120SQDN - IGBT

Ultra Field Stop IGBT, 1200 V, 60 A FGY60T120SQDN General Description This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effec.
Rating: 1 (5 votes)
STMicroelectronics

STGIF10CH60TS-LZ - IGBT

STGIF10CH60TS-LZ Datasheet SLLIMM - 2nd series IPM, 3-phase inverter, 15 A, 600 V, short-circuit rugged IGBT 18 26 17 Marking area 1 17 18 1 26.
Rating: 1 (5 votes)
Xiner

XNA20N60T - Trench-FS IGBT

Xiner XNA20N60T 600V,20A,Trench-FS IGBT Features  Advanced Trench+FS (Field Stop) IGBT technology  Low Collector-Emitter Saturation voltage, typi.
Rating: 1 (5 votes)
BYD

BF92N60T - N-Channel MOSFET

BYD Microelectronics Co., Ltd. BF92N60/BF92N60L/BF92N60R/BF92N60T 600V N-Channel MOSFET General Description These N-Channel enhancement mode power f.
Rating: 1 (4 votes)
IXYS

K2960TC480 - Medium Voltage Thyristor

WESTCODE An IXYS Company Date:- 9 Oct, 2003 Data Sheet Issue:- 2 Provisional Data Medium Voltage Thyristor Types K2960T#450 to K2960T#520 Old Type N.
Rating: 1 (4 votes)
IXYS

K2960TD460 - Medium Voltage Thyristor

WESTCODE An IXYS Company Date:- 9 Oct, 2003 Data Sheet Issue:- 2 Provisional Data Medium Voltage Thyristor Types K2960T#450 to K2960T#520 Old Type N.
Rating: 1 (4 votes)
IXYS

K2960TD500 - Medium Voltage Thyristor

WESTCODE An IXYS Company Date:- 9 Oct, 2003 Data Sheet Issue:- 2 Provisional Data Medium Voltage Thyristor Types K2960T#450 to K2960T#520 Old Type N.
Rating: 1 (4 votes)
IXYS

K2960TV480 - Medium Voltage Thyristor

WESTCODE An IXYS Company Date:- 9 Oct, 2003 Data Sheet Issue:- 2 Provisional Data Medium Voltage Thyristor Types K2960T#450 to K2960T#520 Old Type N.
Rating: 1 (4 votes)
IXYS

K2960TV520 - Medium Voltage Thyristor

WESTCODE An IXYS Company Date:- 9 Oct, 2003 Data Sheet Issue:- 2 Provisional Data Medium Voltage Thyristor Types K2960T#450 to K2960T#520 Old Type N.
Rating: 1 (4 votes)
MagnaChip

MBQ60T65PES - High Speed Fieldstop Trench IGBT

MBQ60T65PES High Speed Fieldstop Trench IGBT Second Generation MBQ60T65PES High Speed Fieldstop Trench IGBT Second Generation General Description Th.
Rating: 1 (4 votes)
Silicon Standard

60T03H - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

SSM60T03H,J N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low gate-charge Simple drive requirement Fast switching Description D G S BV DSS R DS(ON) ID 3.
Rating: 1 (4 votes)
Vicor Corporation

V048F160T015 - (V048x160x015) Voltage Transformation Module

www.DataSheet4U.com PRELIMINARY VTM V•I Chip – VTM Voltage Transformation Module TM V048K160T015 K indicates BGA configuration. For other mounting .
Rating: 1 (4 votes)
Fujitsu Media Devices

29LV160TE90TN - MBM29LV160TE90TN

FUJITSU SEMICONDUCTOR DATA SHEET DS05-20883-2E FLASH MEMORY CMOS 16M (2M × 8/1M × 16) BIT MBM29LV160TE/BE -70/90/12 s GENERAL DESCRIPTION The MBM29.
Rating: 1 (4 votes)
Microsemi Corporation

APTGF50DH60T1G - Asymmetrical - Bridge NPT IGBT Power Module

APTGF50DH60T1G Asymmetrical - Bridge NPT IGBT Power Module VCES = 600V IC = 50A* @ Tc = 80°C www.DataSheet4U.com Application • Welding converters • .
Rating: 1 (4 votes)
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