60T Datasheet | Specifications & PDF Download

MBQ60T65PES High Speed Fieldstop Trench IGBT Second Generation MBQ60T65PES High Speed Fieldstop Trench IGBT Second Generation General Description Th

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R FEATURES Excellent capability of absorbing transient surge Quick response to surge voltage Eliminates over voltage caused by fast rising transients

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www.DataSheet4U.com PRELIMINARY VTM V•I Chip – VTM Voltage Transformation Module TM V048K160T015 K indicates BGA configuration. For other mounting

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www.DataSheet4U.com PRELIMINARY VTM V•I Chip – VTM Voltage Transformation Module TM V048K160T015 K indicates BGA configuration. For other mounting

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SDM06C60TA2 Datasheet 600V/6A 3-PHASE FULL-BRIDGE DRIVER (INTELLIGENT POWER MODULE) 1.DESCRIPTION SDM06C60TA2 is a 3-phase brushless DC motor drive

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JW5060T Parameters Subject to Change Without Notice 24V/3A Sync. Step-Down Converter DESCRIPTION The JW®5060T is a monolithic buck switching regula

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I06N60T-VB I06N60T-VB Datasheet /$IBOOFM
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%4 Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg max. (nC

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www.DataSheet4U.com PRELIMINARY VTM V•I Chip – VTM Voltage Transformation Module TM V048K060T040 K indicates BGA configuration. For other mounting

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www.DataSheet4U.com PRELIMINARY VTM V•I Chip – VTM Voltage Transformation Module TM V048K060T040 K indicates BGA configuration. For other mounting

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SDM10C60TA2 Datasheet 600V/10A 3-PHASE FULL-BRIDGE DRIVER (INTELLIGENT POWER MODULE) 1.DESCRIPTION SDM10C60TA2 is a 3-phase brushless DC motor drive

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IKW30N60T TRENCHSTOP™ Series q Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Contr

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IGW30N60T TRENCHSTOP™ Series Low Loss IGBT : IGBT in TRENCHSTOP™ and Fieldstop technology Features:  Very low VCE(sat) 1.5V (typ.)  Maximum Junctio

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Xiner XNF20N60T 600V，20A，Trench-FS IGBT Features  Advanced Trench+FS (Field Stop) IGBT technology  Low Collector-Emitter Saturation voltage, typi

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http://www.ncepower.com Pb Free Product NCEP60T12A NCE N-Channel Super Trench Power MOSFET Description The NCEP60T12A uses Super Trench technology t

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CRG60T60AN3H CRG60T60AN3H FS IGBT ， VCES 600 V ，。 IC 60 A RoHS 。 Ptot （TC=25℃） 403 W VCE(sat) 1.85 V ：TO-3P（N） ● FS ，； ● ：VCE(

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IGBT - Field Stop, Trench, Soft Fast Recovery Diode 650 V, 160 A FGY160T65SPD-F085 Benefits • Very Low Conduction and Switching Losses for a High Effi

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http://www.ncepower.com Pb Free Product NCEP60T18 NCE N-Channel Super Trench Power MOSFET Description The NCEP60T18 uses Super Trench technology tha

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CRG60T60AK3HD CRG60T60AK3HD FS IGBT ， ，。 RoHS 。 ● FS ，； ● ：VCE(sat),TYP=1.85V @IC=60A,VGE=15V ； VCES 650 V IC 60 A Ptot （TC=25℃） 483 W

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MVK Series ● Vertical SMD type ● Wide Temperature range ● 105℃ 1,000~ 2,000Hrs assured Solventproof ● For CD/DVD-ROM, Navigation, LCD MT/TV ● Ecolog

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600V N-Channel MOSFETs PDC02N60T General Description These N-Channel enhancement mode power field effect transistors are planar stripe, DMOS technol

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