64M-BIT Datasheet | Specifications & PDF Download

W25Q64FV 3V 64M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI & QPI Publication Release Date: July 18, 2017 -1 Revision S W25Q64FV Table of Contents

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W25Q64JV 3V 64M-BIT SERIAL FLASH MEMORY WITH DUAL, QUAD SPI For Industrial & Industrial Plus Grade Publication Release Date: March 10, 2021 Revision K

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www.DataSheet4U.com M28W320FST, M28W320FSB, M28W640FSB, M28W640FST 32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Boot Block, Secure Flash Memories

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www.DataSheet4U.com M28W320FST, M28W320FSB, M28W640FSB, M28W640FST 32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Boot Block, Secure Flash Memories

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SDRAM (Rev.1.2) Apr. '99 64M bit Synchronous DRAM MITSUBISHI LSIs M2V64S20BTP-7,-7L,-8,-8L,-8A,-10,-10L (4-BANK x 4194304-WORD x 4-BIT) M2V64S30BTP

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ESMT Flash FEATURES  Voltage Supply: 1.8V (1.7 V ~ 1.95V)  Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bi

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ESMT Flash FEATURES  Voltage Supply: 1.8V (1.7 V ~ 1.95V)  Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bi

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ESMT Flash FEATURES z Voltage Supply: 1.8V (1.7 V ~ 1.95V) z Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bi

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W25Q64DW 1.8V 64M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI & QPI www.DataSheet.net/ -1- Publication Release Date: January 13, 2011 Preliminary - R

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3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module 168 pin unbuffered DIMM Modules HYS64/72V2200GU-8/-10 HYS64/72V4220GU

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www.DataSheet4U.com FUJITSU SEMICONDUCTOR DATA SHEET DS05-20903-1E FLASH MEMORY CMOS 64 M (4M × 16) BIT MirrorFlashTM MBM29PL65LM-90/10 s DESCRIPT

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W25Q64FV 3V 64M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI & QPI Publication Release Date: July 18, 2017 - 1 Revision S W25Q64FV Table of Contents 1.

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dsPIC33CK256MP508 FAMILY 28/36/48/64/80-Pin, 16-Bit Digital Signal Controllers with High-Resolution PWM and CAN Flexible Data (CAN FD) Operating Cond

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dsPIC33CK256MP508 FAMILY 28/36/48/64/80-Pin, 16-Bit Digital Signal Controllers with High-Resolution PWM and CAN Flexible Data (CAN FD) Operating Cond

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EtronTech EM6GC16EWKE 64M x 16 bit DDR3 Synchronous DRAM (SDRAM) Advance (Rev. 1.0, Jul. /2015) Features • JEDEC Standard Compliant • Power supplie

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EtronTech EM6AB080 Etron Confidential 64M x 8 bit DDR Synchronous DRAM (SDRAM) Advanced (Rev. 1.1, Dec. /2013) Features • Fast clock rate: 250/200

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TC58DVM92A5TAI0 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 512-MBIT (64M × 8 BITS) CMOS NAND E2PROM DESCRIPTION The device is a single 3

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KM23C64000T 64M-Bit (8Mx8 /4Mx16) CMOS MASK ROM FEATURES • Switchable organization 8,388,608 x 8(byte mode) 4,194,304 x 16(word mode) • Fast access ti

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PC133 SDRAM (Rev.0.5) Oct. '99 64M bit Synchronous DRAM M2V64S20BTP-6 (4-BANK x 4194304-WORD x 4-BIT) M2V64S30BTP-6 (4-BANK x 2097152-WORD x 8-BIT) M

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K4S640432D CMOS SDRAM 64Mbit SDRAM 4M x 4Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 June 1999 * Samsung Electronics reserves the right to c

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