TC58DVM92A5TAI0 - 512M-BIT (64M x 8 BITS) CMOS NAND E2PROM

Toshiba

TC58DVM92A5TAI0 Datasheet Preview — Preview of TC58DVM92A5TAI0 PDF

Datasheet Details

Part number	TC58DVM92A5TAI0
Manufacturer	Toshiba ↗
File Size	354.22 KB
Description	512M-BIT (64M x 8 BITS) CMOS NAND E2PROM
Datasheet	TC58DVM92A5TAI0-Toshiba.pdf

TC58DVM92A5TAI0 Product details

Description

The device is a single 3.3 V 512Mbit (553,648,128 bit) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes × 32 pages × 4096 blocks.

Features

Organization Memory cell allay 528 × 128K × 8 Register 528 × 8 Page size 528 bytes Block size (16K + 512) bytes.
Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read.
Mode control Serial input/output Command control.
Power supply VCC = 2.7 V to 3.6 V.
Access time Cell array to register 25 μs max Serial Read Cycle 40 ns min.
Program/Erase time Auto Page Program 300 μs/page typ. Auto Block Erase 2.5 ms/block typ.

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Published: Feb 15, 2017 |