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TC58DVM72F1FT00 - (TC58DxM72) 128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM

Download the TC58DVM72F1FT00 datasheet PDF. This datasheet also covers the TC58DVMxxx variant, as both devices belong to the same (tc58dxm72) 128-mbit (16m x 8 bits/8m x 16bits) cmos nand e2prom family and are provided as variant models within a single manufacturer datasheet.

General Description

The TC58DxM72x1xxxx is a 128-Mbit (138,412,032) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes/264 words u 32 pages u 1024 blocks.

The device uses dual power supplies (2.7 V to 3.6 V for VCC and 1.65 V to 1.95 V for VCCQ ).

Key Features

  • x Organization TC58DxM72A1xxxx Memory cell allay 528 u 32K u 8 Register 528 u 8 Page size 528 bytes Block size (16K  512) bytes x Modes Read, Reset, Auto Page Program Auto Block Erase, Status Read x Mode control Serial input/output Command control x Power supply TC58DVM72x1xxxx Vcc: 2.7V to 3.6V Vccq: 2.7V to 3.6V x Program/Erase Cycles 1E5 cycle (with ECC) x Access time Cell array to register 25 Ps max Serial Read Cycle 50 ns min x Operating current Read (50 ns cycle) 10 mA typ.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (TC58DVMxxx_Toshiba.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number TC58DVM72F1FT00
Manufacturer Toshiba
File Size 369.62 KB
Description (TC58DxM72) 128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM
Datasheet download datasheet TC58DVM72F1FT00 Datasheet

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Part Number Description
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
TC58DVM72A1FT00/ TC58DVM72F1FT00 TC58DAM72A1FT00/ TC58DAM72F1FT00 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 128-MBIT (16M u 8 BITS/8M x 16BITS) CMOS NAND E2PROM DESCRIPTION The TC58DxM72x1xxxx is a 128-Mbit (138,412,032) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes/264 words u 32 pages u 1024 blocks. The device uses dual power supplies (2.7 V to 3.6 V for VCC and 1.65 V to 1.95 V for VCCQ ). The device has a 528-byte/264-words static register which allows program and read data to be transferred between the register and the memory cell array in 528-byte/256-words increments.