TC58DVM82A1FT00 - 256-MBIT (32M x 8 BITS) CMOS NAND E2PROM

Toshiba Semiconductor

Datasheet Details

Part number	TC58DVM82A1FT00
Manufacturer	Toshiba ↗ Semiconductor
File Size	338.05 KB
Description	256-MBIT (32M x 8 BITS) CMOS NAND E2PROM
Datasheet	TC58DVM82A1FT00_ToshibaSemiconductor.pdf

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w 2 TC58DVM82A1FT00 The device is a 256-Mbit (276,824,064) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes × 32 pages × 2048 blocks. The device uses single power supply (2.7 V to 3.6 V for VCC). The device has a 528-byte static register which allows program and read data to be transferred between the register and the memory cell array in 528-byte increments. The Erase operation is implemented in a single block unit (16 Kbytes + 512 bytes: 5.

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Published: Jan 14, 2006 |