TC58DVM82A1FT00 256-MBIT (32M x 8 BITS) CMOS NAND E2PROM

Toshiba Semiconductor

Description

m o TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS .c U CMOS NAND E PROM 256-MBIT (32M × 8 BITS) 4 t .
e e h S a at .

📥 Download Datasheet

TC58DVM82A1FT00 Datasheet Preview — Preview of TC58DVM82A1FT00 PDF

Datasheet Specifications

Part number: TC58DVM82A1FT00
Manufacturer: Toshiba ↗ Semiconductor
File Size: 338.05 KB
Datasheet: TC58DVM82A1FT00_ToshibaSemiconductor.pdf
Description: 256-MBIT (32M x 8 BITS) CMOS NAND E2PROM

Features

* w 2 TC58DVM82A1FT00 The device is a 256-Mbit (276,824,064) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes × 32 pages × 2048 blocks. The device uses single power supply (2.7 V to 3.6 V for VCC). The device has a 528-byte static register which a

Applications

* such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage.
* Organization Memory cell allay 528 × 64K × 8 Register 528 × 8 Page size 528 bytes Block size (16K + 512) bytes Modes Read, R

TC58DVM82A1FT00 Distributors

📁 Related Datasheet

TC58DVM72A1FT00 TC58DVM72F1FT00 TC58DVM92A1FT0 TC58DVM92A1FT00 TC58DVM92A5TA00 TC58DVM92A5TAI0

📌 All Tags

TC58DVM82A1FT00 256-MBIT 32M BITS CMOS NAND E2PROM Toshiba Semiconductor

Toshiba Semiconductor TC58DVM82A1FT00-like datasheet