Part number:
TC58DVM82A1FT00
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
338.05 KB
Description:
256-mbit (32m x 8 bits) cmos nand e2prom.
TC58DVM82A1FT00 Datasheet (338.05 KB)
* w 2 TC58DVM82A1FT00 The device is a 256-Mbit (276,824,064) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes × 32 pages × 2048 blocks. The device uses single power supply (2.7 V to 3.6 V for VCC). The device has a 528-byte static register which a
TC58DVM82A1FT00 Datasheet (338.05 KB)
TC58DVM82A1FT00
Toshiba ↗ Semiconductor
338.05 KB
256-mbit (32m x 8 bits) cmos nand e2prom.
📁 Related Datasheet
TC58DVM72A1FT00 (TC58DxM72) 128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM (Toshiba)
TC58DVM72F1FT00 (TC58DxM72) 128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM (Toshiba)
TC58DVM92A1FT0 512M-Bit CMOS NAND EPROM (Toshiba)
TC58DVM92A1FT00 512M-Bit CMOS NAND EPROM (Toshiba)
TC58DVM92A5TA00 512M-BIT (64M x 8 BITS) CMOS NAND E2PROM (Toshiba)
TC58DVM92A5TAI0 512M-BIT (64M x 8 BITS) CMOS NAND E2PROM (Toshiba)
TC58DVG02A1F00 1 Gbit (128M x *8its) CMOS NAND EPROM (Toshiba)
TC58DVG02A1FI0 1 Gbit (128M x *8its) CMOS NAND EPROM (Toshiba)
TC58DVG02A1FT00 MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS (Toshiba Semiconductor)
TC58DVG3S0ETA00 8-GBIT (1G x 8-BIT) CMOS NAND E2PROM (Toshiba)
