TC58DVM92A1FT00 512M-Bit CMOS NAND EPROM

Toshiba

Description

TC58DVM92A1FT00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 512-MBIT (64M × 8 BITS) CMOS NAND E PROM .
The device is a single 3.

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Datasheet Specifications

Part number: TC58DVM92A1FT00
Manufacturer: Toshiba ↗
File Size: 410.61 KB
Datasheet: TC58DVM92A1FT00_Toshiba.pdf
Description: 512M-Bit CMOS NAND EPROM

Features

* Organization Memory cell allay 528 × 128K × 8 Register 528 × 8 Page size 528 bytes Block size (16K + 512) bytes Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Multi Block Program, Multi Block Erase Mode control Serial input/output Command control

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TC58DVM92A1FT00 512M-Bit CMOS NAND EPROM Toshiba

Toshiba TC58DVM92A1FT00-like datasheet