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TC58DVG02A1F00

1 Gbit (128M x *8its) CMOS NAND EPROM

TC58DVG02A1F00 Features

* Organization Memory cell allay 528 × 256K × 8 Register 528 × 8 Page size 528 bytes Block size (16K + 512) bytes Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Multi Block Program, Multi Block Erase Mode control Serial input/output Command control

TC58DVG02A1F00 General Description

The TC58DVG02A1 is a single 3.3 V 1-Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes × 32 pages × 8192 blocks. The device has a 528-byte static register which allows program and read data to be transferred between the registe.

TC58DVG02A1F00 Datasheet (378.50 KB)

Preview of TC58DVG02A1F00 PDF

Datasheet Details

Part number:

TC58DVG02A1F00

Manufacturer:

Toshiba ↗

File Size:

378.50 KB

Description:

1 gbit (128m x *8its) cmos nand eprom.

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TAGS

TC58DVG02A1F00 Gbit 128M *8its CMOS NAND EPROM Toshiba

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