TC58DVG02A1F00 1 Gbit (128M x *8its) CMOS NAND EPROM

Toshiba

Description

TC58DVG02A1FT00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1-GBIT (128M × 8 BITS) CMOS NAND E PROM .
The TC58DVG02A1 is a single 3.

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Datasheet Specifications

Part number: TC58DVG02A1F00
Manufacturer: Toshiba ↗
File Size: 378.50 KB
Datasheet: TC58DVG02A1F00_Toshiba.pdf
Description: 1 Gbit (128M x *8its) CMOS NAND EPROM

Features

* Organization Memory cell allay 528 × 256K × 8 Register 528 × 8 Page size 528 bytes Block size (16K + 512) bytes Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Multi Block Program, Multi Block Erase Mode control Serial input/output Command control

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TC58DVG02A1F00 Gbit 128M *8its CMOS NAND EPROM Toshiba

Toshiba TC58DVG02A1F00-like datasheet