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TC58DVG02A1FT00

MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

TC58DVG02A1FT00 Features

* x Organization Memory cell allay 528 u 256K u 8 Register 528 u 8 Page size 528 bytes Block size (16K  512) bytes x Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Multi Block Program, Multi Block Erase x Mode control Serial input/output Command control x Power supply VCC 2.

TC58DVG02A1FT00 General Description

The TC58DVG02A1 is a single 3.3 V 1-Gbit (1,107,296,256) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes u 32 pages u 8192 blocks. The device has a 528-byte static register which allows program and read data to be transferred between the register.

TC58DVG02A1FT00 Datasheet (511.12 KB)

Preview of TC58DVG02A1FT00 PDF

Datasheet Details

Part number:

TC58DVG02A1FT00

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

511.12 KB

Description:

Mos digital integrated circuit silicon gate cmos.
TC58DVG02A1FT00 www.DataSheet4U.com TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1-GBIT (128M u 8 BITS) CMOS NAND E PROM DES.

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TAGS

TC58DVG02A1FT00 MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS Toshiba Semiconductor

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