Datasheet4U Logo Datasheet4U.com

TC58DVG02A1FT00 Datasheet - Toshiba Semiconductor

TC58DVG02A1FT00 MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

The TC58DVG02A1 is a single 3.3 V 1-Gbit (1,107,296,256) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes u 32 pages u 8192 blocks. The device has a 528-byte static register which allows program and read data to be transferred between the register.

TC58DVG02A1FT00 Features

* x Organization Memory cell allay 528 u 256K u 8 Register 528 u 8 Page size 528 bytes Block size (16K  512) bytes x Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Multi Block Program, Multi Block Erase x Mode control Serial input/output Command control x Power supply VCC 2.

TC58DVG02A1FT00 Datasheet (511.12 KB)

Preview of TC58DVG02A1FT00 PDF

Datasheet Details

Part number:

TC58DVG02A1FT00

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

511.12 KB

Description:

Mos digital integrated circuit silicon gate cmos.

📁 Related Datasheet

TC58DVG02A1F00 1 Gbit (128M x *8its) CMOS NAND EPROM (Toshiba)

TC58DVG02A1FI0 1 Gbit (128M x *8its) CMOS NAND EPROM (Toshiba)

TC58DVG3S0ETA00 8-GBIT (1G x 8-BIT) CMOS NAND E2PROM (Toshiba)

TC58DVM72A1FT00 (TC58DxM72) 128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM (Toshiba)

TC58DVM72F1FT00 (TC58DxM72) 128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM (Toshiba)

TC58DVM82A1FT00 256-MBIT (32M x 8 BITS) CMOS NAND E2PROM (Toshiba Semiconductor)

TC58DVM92A1FT0 512M-Bit CMOS NAND EPROM (Toshiba)

TC58DVM92A1FT00 512M-Bit CMOS NAND EPROM (Toshiba)

TC58DVM92A5TA00 512M-BIT (64M x 8 BITS) CMOS NAND E2PROM (Toshiba)

TC58DVM92A5TAI0 512M-BIT (64M x 8 BITS) CMOS NAND E2PROM (Toshiba)

TAGS

TC58DVG02A1FT00 MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS Toshiba Semiconductor

Image Gallery

TC58DVG02A1FT00 Datasheet Preview Page 2 TC58DVG02A1FT00 Datasheet Preview Page 3

TC58DVG02A1FT00 Distributor