TC58DVG02A1FI0 Datasheet (Toshiba) - 1 Gbit (128M x *8its) CMOS NAND EPROM

TC58DVG02A1FI0, 1 Gbit (128M x *8its) CMOS NAND EPROM

The TC58DVG02A1 is a single 3.3 V 1-Gbit (1,107,296,256) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes × 32 pages × 8192 blocks.

The device has a 528-byte static register which allows program and read data to be transferred between the register

TC58DVG02A1FI0 Features

* Organization Memory cell allay 528 × 256K × 8 Register 528 × 8 Page size 528 bytes Block size (16K + 512) bytes Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Multi Block Program, Multi Block Erase Mode control Serial input/output Command control