TC58DVG02A1FI0 - 1 Gbit (128M x *8its) CMOS NAND EPROM

Toshiba

TC58DVG02A1FI0 Datasheet Preview — Preview of TC58DVG02A1FI0 PDF

Datasheet Details

Part number	TC58DVG02A1FI0
Manufacturer	Toshiba ↗
File Size	466.02 KB
Description	1 Gbit (128M x *8its) CMOS NAND EPROM
Datasheet	TC58DVG02A1FI0_Toshiba.pdf

TC58DVG02A1FI0 Product details

Description

The TC58DVG02A1 is a single 3.3 V 1-Gbit (1,107,296,256) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes × 32 pages × 8192 blocks.

Features

Organization Memory cell allay 528 × 256K × 8 Register 528 × 8 Page size 528 bytes Block size (16K + 512) bytes Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Multi Block Program, Multi Block Erase Mode control Serial input/output Command control.
Power supply VCC = 2.7 V to 3.6 V Program/Erase Cycles 1E5 cycle (with ECC) Access time Cell array to register 25 µs max Serial Read Cycle 50 ns min Operating current Read (50 ns cy.

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Published: Jun 16, 2005 |