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CI-MCP Specification 16GB eNAND (x8) + 16Gb LPDDR3 (x32) This document is a general product description and is subject to change without notice. SK h

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Rev. 0.9.1,Mar. 2010 K9GAG08U0E K9LBG08U0E K9HCG08U1E Final 16Gb E-die NAND Flash Multi-Level-Cell (2bit/cell) datasheet SAMSUNG ELECTRONICS RESERV

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16Gb DDR5 SDRAM Die Rev A Features 16Gb DDR5 SDRAM Addendum MT60B4G4, MT60B2G8, MT60B1G16 Die Revision A Features This document describes the produ

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CI-MCP Specification 16GB eNAND (x8) + 16Gb LPDDR3 (x32) This document is a general product description and is subject to change without notice. SK h

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Rev. 0.0, May. 2015 K4E6E304EB Target 16Gb DDP LPDDR3 SDRAM 178FBGA, 11x11.5 256M x32 (32M x32 x 8banks) + 256M x32 (32M x32 x 8banks) This document a

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APCSI MEx1pAr0eS6ssM12.eD0datoitaSaACTSAohn6eGfebidtpseCnotnitarolller Copyright Notice: Copyright © 2008, ASMedia TECHNOLOGY INC. All Rights Reserve

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Rev.1.1, May. 2011 K9GAG08U0F 16Gb F-die NAND Flash Multi-Level-Cell (2bit/cell) datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS

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Rev. 1.0, Jun. 2014 K4E6E304EE 16Gb QDP LPDDR3 SDRAM 178FBGA, 11x11.5, 2/CS, 2CKE 256M x32 1/CS, 1CKE + 256M x32 1/CS, 1CKE This document and all info

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178ball FBGA Specification 8Gb LPDDR3 (x32) 16Gb LPDDR3 (x32) V1.0 1 Document Title FBGA 8Gb (x32, 1CS) LPDDR3 16Gb (x32, 2CS) LPDDR3 Revision Hist

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16Gb DDR5 SDRAM Die Rev A Features 16Gb DDR5 SDRAM Addendum MT60B4G4, MT60B2G8, MT60B1G16 Die Revision A Features This document describes the produ

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16Gb DDR5 SDRAM Die Rev A Features 16Gb DDR5 SDRAM Addendum MT60B4G4, MT60B2G8, MT60B1G16 Die Revision A Features This document describes the produ

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IS21ES04G/08G/16G/32G IS22ES04G/08G/16G/32G 4GB/8GB/16GB/32GB eMMC With eMMC 5.0 Interface ADVANCED DATA SHEET IS21/22ES04G/08G/16G/32G 4GB/8GB/16GB/

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DATASHEET JMS580 USB 3.1 Gen 2 to SATA 6Gb/s Bridge Controller Document No.: PDS-16016 / Revision: 0.40 / Date: 05/25/2017 JMicron Technology Corpor

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16Gb DDR4 SDRAM 16Gb DDR4 SDRAM Lead-Free&Halogen-Free (RoHS Compliant) H5ANAG4NCJR H5ANAG8NCJR H5ANAG6NCJR * SK hynix reserves the right to change p

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16Gb DDR4 SDRAM 16Gb DDR4 SDRAM Lead-Free&Halogen-Free (RoHS Compliant) H5ANAG4NCJR H5ANAG8NCJR H5ANAG6NCJR * SK hynix reserves the right to change p

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PART OBSOLETE - EOL18 Bulletin I2718 rev. E 05/02 6GBU Series 6.0 Amps Single Phase Full Wave Features Diode chips are glass passivated Suitable for

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PART OBSOLETE - EOL18 Bulletin I2718 rev. E 05/02 6GBU Series 6.0 Amps Single Phase Full Wave Features Diode chips are glass passivated Suitable for

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m o .c 4U 2.5V / 3.3V tMultilevel Input to e Differential e LVPECL/LVNECL h Clock or S Data a t Receiver/Driver/Translator a Buffer .D w The NB6L16 is

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CI-MCP Specification 16GB eNAND (x8) + 16Gb LPDDR3 (x32) This document is a general product description and is subject to change without notice. SK h

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IS43/46QR8K02S2A 2Gx8 16Gb DDR4 SDRAM ® Long-term Support World Class Quality FEATURES • Dual Rank: Each rank has its own CS, ODT, and CKE • Standar

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