6N70A Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor INCHANGE Semiconductor 6N70A ·FEATURES ·Drain Current ID= 6A@ TC=25℃ ·Drain Source Voltage : VDSS= 700V(Min) ·Avalan

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Advanced Power MOSFET w w w .D t a FEATURES h S a t e e 4U . m o c SSS6N70A BVDSS = 700 V RDS(on) = 1.8 Ω ID = 4 A TO-220F Avalanche Rugged

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Silicon N-Channel Power MOSFET CS6N70 A8D ○R General Description： CS6N70 A8D, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-al

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Silicon N-Channel Power MOSFET CS6N70 A3D1-G ○R General Description： CS6N70 A3D1-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the s

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Silicon N-Channel Power MOSFET CS6N70 A3H ○R General Description： CS6N70 A3H,the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-ali

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Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Ope

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Silicon N-Channel Power MOSFET ○R CS6N70 A4D-G General Description： CS6N70 A4D-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the se

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Silicon N-Channel Power MOSFET CR6N70 A4K General Description： CR6N70 A4K, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligne

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Silicon N-Channel Power MOSFET CR6N70 A3K General Description： CR6N70 A3K, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligne

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Silicon N-Channel Power MOSFET CS6N70 A3D-G ○R General Description： CS6N70 A3D-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the sel

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Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Ope

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Advanced Power MOSFET w w w .D t a FEATURES h S a t e e 4U . m o c SSH6N70A BVDSS = 700 V RDS(on) = 1.8 Ω ID = 6 A TO-3P Avalanche Rugged T

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Silicon N-Channel Power MOSFET ○R CS6N70 A3R-G General Description： CS6N70 A3R-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the se

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Silicon N-Channel Power MOSFET ○R CS6N70 A4R-G General Description： CS6N70 A4R-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the se

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