isc N-Channel MOSFET Transistor INCHANGE Semicond.
Fairchild Semiconductor
5
SSS6N70A - Advanced Power MOSFET
Advanced Power MOSFET w w w .D t a FEATURES h S a t e e 4U . m o c SSS6N70A BVDSS = 700 V RDS(on) = 1.8 Ω ID = 4 A TO-220F Avalanche Rugged.
Fairchild Semiconductor
5
P6N70A - SSP6N70A
Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Ope.
Huajing Microelectronics
4
CS6N70A3D1-G - Silicon N-Channel Power MOSFET
Silicon N-Channel Power MOSFET CS6N70 A3D1-G ○R General Description： CS6N70 A3D1-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the s.
Huajing Microelectronics
4
CS6N70A3H - Silicon N-Channel Power MOSFET
Silicon N-Channel Power MOSFET CS6N70 A3H ○R General Description： CS6N70 A3H,the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-ali.
Huajing Microelectronics
3
CS6N70A4D-G - Silicon N-Channel Power MOSFET
Silicon N-Channel Power MOSFET ○R CS6N70 A4D-G General Description： CS6N70 A4D-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the se.
Fairchild
3
SSP6N70A - Advanced Power MOSFET
Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Ope.
Huajing Microelectronics
2
CS6N70A3D-G - Silicon N-Channel Power MOSFET
Silicon N-Channel Power MOSFET CS6N70 A3D-G ○R General Description： CS6N70 A3D-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the sel.
Huajing Microelectronics
2
CS6N70A8D - Silicon N-Channel Power MOSFET
Silicon N-Channel Power MOSFET CS6N70 A8D ○R General Description： CS6N70 A8D, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-al.
INCHANGE
2
6N70A - N-Channel MOSFET
isc N-Channel MOSFET Transistor INCHANGE Semiconductor 6N70A ·FEATURES ·Drain Current ID= 6A@ TC=25℃ ·Drain Source Voltage : VDSS= 700V(Min) ·Avalan.
Sansung Semiconductor
1
SSS6N70A - Advanced Power MOSFET
w w a D . w S a t e e h U 4 t m o .c w w w .D t a S a e h U 4 t e m o .c w w w .D at h S a t e e 4U . m o c .
Fairchild Semiconductor
1
SSH6N70A - Advanced Power MOSFET
Advanced Power MOSFET w w w .D t a FEATURES h S a t e e 4U . m o c SSH6N70A BVDSS = 700 V RDS(on) = 1.8 Ω ID = 6 A TO-3P Avalanche Rugged T.
Samsung Electronics
1
SSF6N70A - Advanced Power MOSFET
w w a D . w S a t e e h U 4 t m o .c w w w .D t a S a e h U 4 t e m o .c w w w .D a t a e h S 4 t e U . m o c .