7-Cell Datasheet | Specifications & PDF Download

Product Folder Order Now Technical Documents Tools & Software Support & Community BQ24725A SLUSAL0C – SEPTEMBER 2011 – REVISED JANUARY 2020 BQ247

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CHIPSET-IC.COM N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 20mΩ ID 12A G UIS,

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Product Folder Order Now Technical Documents Tools & Software Support & Community bq24780S SLUSC27C – APRIL 2015 – REVISED MARCH 2017 bq24780S 1-

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               ENABLE 1nF 6 STAT BATP 2 BIAS 5 10nF 8 ENETA3000SW 3 22uF 2.2uH RISET 7 ISET BATC 1 BATN 4 10uF 10uF Li+ Batt

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P-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS -30V RDSON (MAX.) 8.5mΩ ID -25A P-Channel MOSFET UIS, R

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Spec. No. SAMSUNG SDI Confidential Proprietary INR18650-35E Version No. Ver. 1.1 SPECIFICATION OF PRODUCT for Lithium-ion rechargeable cell Model na

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 9mΩ ID 50A G UIS, Rg 100% Tested S

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Product Folder Sample & Buy Technical Documents Tools & Software Support & Community bq24735 SLUSAK9B – SEPTEMBER 2011 – REVISED APRIL 2015 bq247

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Machine Translated by Google IP2312 Single-cell lithium battery synchronous switch buck charging IC 1 Features ÿ Synchronous switch step-down chargi

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Tenergy Corporation 436 Kato Terrace Fremont CA 94539 Tel: 510-687-0388 Fax: 510-687-0328 TENERGY 18650 2200mAh Li-Ion Cell Product Name: Tenergy L

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BQ24800 SLUSDO8A – MARCH 2020 – REVISED JANUARY 2025 BQ24800 SMBus 1- to 4-Cell Buck Battery Charge Controller With Peak Power, Hybrid Power Boost and

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 1.7mΩ ID 100A G UIS, Rg 100% Tested

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XB4908 SERIES One Cell Lithium-ion/Polymer Battery Protection IC GENERAL DESCRIPTION The XB4908 SERIES product is a high i ntegration solution for li

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EM8569 HV Start-up Green-mode PWM Converter with Brown-Out Protection General Description EM8569 is a high performance, low cost, HV Start-up, curren

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  N‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:  BVDSS  25V  D RDSON (MAX.)  6mΩ  ID  80A  G   UIS, Rg 100%

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Cell Type UR18650A Specifications Nominal Capacity Nominal Voltage Charging Method Charging Voltage Charging Current Charging Time Ambient Temperature

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SAMSUNG SDI Confidential Proprietary Spec. No. ICR18650-26J Version No. 1.0 Specification of Product 1. Customer : WPG China (SZ) Inc 2. Product

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    N‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:  BVDSS  100V  D RDSON (MAX.)  150mΩ  ID  10A  G   UIS, Rg

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-SAMSUNG SDI Confidential Proprietary – Spec. No. INR18650-20R Version No. 1.2 In-Young Jang SPECIFICATION OF PRODUCT Lithium-ion rechargeable c

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