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SM4370NSKP - N-Channel MOSFET
SM4370NSKP Features · 30V/50A, RDS(ON)=8.4mW (max.) @ VGS=10V RDS(ON)=12.6mW (max.) @ VGS=4.5V · Reliable and Rugged · Lead Free and Green Devices Ava.HYG053N10NS1V - N-Channel MOSFET
HYG053N10NS1D/U/V N-Channel Enhancement Mode MOSFET HYG053N10NS1D/U/V Feature HYG053N10NS1D/U/V Pin Description 100V/95A RDS(ON)=5.2mΩ(typ.)@VG.PC8170NSZ - Photocoupler
PC8171XNSZ Series PC8171 NSZ Series X Low Input Current Type Photocoupler s Features 1. Low input current type(IF=0.5mA) 2. High resistance to nois.DIM1200NSM17-E000 - Single Switch IGBT Module
DIM1200NSM17-E000 www.DataSheet4U.com DIM1200NSM17-E000 Single Switch IGBT Module Replaces June 2004 version, issue PDS5644-2.0 PDS5644-3.0 July 2004.HYG053N10NS1B - N-Channel MOSFET
HYG053N10NS1P/B Feature 100V/120A RDS(ON)=4.8 mΩ(typ.)@VGS = 10V 100% Avalanche Tested Reliable and Rugged Halogen-Free Devices Available (RoH.PC81710NSZ - Photocoupler
PC8171XNSZ Series PC8171 NSZ SeriesX Low Input Current Type Photocoupler s Features 1. Low input current type(IF=0.5mA) 2. High resistance to noise.ADC10461 - 10-Bit 600ns A/D Converter
ADC10461/ADC10462/ADC10464 10-Bit 600 ns A/D Converter with Input Multiplexer and Sample/Hold June 1999 ADC10461/ADC10462/ADC10464 10-Bit 600 ns A/D.N0910NS200 - HIGH POWER THYRISTOR
Technical Data : N0910NS200 Page 1 of 3 ********************************************************************************************************** H.200NS80 - Standard Recovery Diodes
Naina Semiconductor Ltd. 200NS(R) Standard Recovery Diodes (Stud and Flat Base Type) Features • Diffused Series • Industrial grade • Available in No.200NSR10 - Standard Recovery Diodes
Naina Semiconductor Ltd. 200NS(R) Standard Recovery Diodes (Stud and Flat Base Type) Features • Diffused Series • Industrial grade • Available in No.200NSR40 - Standard Recovery Diodes
Naina Semiconductor Ltd. 200NS(R) Standard Recovery Diodes (Stud and Flat Base Type) Features • Diffused Series • Industrial grade • Available in No.IRF9530NS - P-Channel MOSFET
IRF9530NS-VB IRF9530NS-VB Datasheet P-Channel 100 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () Max. -100 0.22 at VGS = - 10.SM2210NSQG - N-Channel MOSFET
SM2210NSQG Features · 12V/12A, RDS(ON) = 4.3mW(max.) @ VGS =4.5V RDS(ON) = 5.6mW(max.) @ VGS =2.5V · 100% UIS + Rg Tested · Reliable and Rugged · Lead.IRF540NS - Power MOSFET
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated .IRF9530NSTRR - Power MOSFET
PD - 91523A IRF9530NS/L HEXFET® Power MOSFET Advanced Process Technology Surface Mount (IRF9530NS) l Low-profile through-hole (IRF9530NL) l 175°C Ope.SM6020NSF - N-Channel MOSFET
SM6020NSF Features · 63V/80A, RDS(ON)= 4.5mW (Max.) @ VGS=10V · Reliable and Rugged · Lead Free and Green Devices Available (RoHS Compliant) ® N-Chan.BSC109N10NS3G - Power-Transistor
%&$ #B< # : A 0<& <,9=4=>: < 7LHZ[XLY Q. 5BI G 71D5 3 81B75 6? B8978 6B5AE5>3 I 1@@<93 1D9? >C Q( @D9=9J54 6? B43 43 3 ? >F5BC9? > Q' 3 81>>5.PC30F8 - FRD MODULE 30A/800V/trr:60nsec
www.DataSheet4U.com FRD MODULE FEATURES * Isolated Base * Dual Diode Cathode Common * Ultra Fast Recovery * High Surge Capability * UL Recognized, Fi.200NSR - Standard Recovery Diodes
Naina Semiconductor emiconductor Ltd. Features • Diffused Series • Industrial grade • Available in Normal and Reverse polarity • Metric and UNF thread.BSC118N10NSG - Power-Transistor
BSC118N10NS G OptiMOS™2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance.