7.0ns Datasheet | Specifications & PDF Download

HYG053N10NS1P/B Feature  100V/120A RDS(ON)=4.8 mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Halogen-Free Devices Available (RoH

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HYG053N10NS1P/B Feature  100V/120A RDS(ON)=4.8 mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Halogen-Free Devices Available (RoH

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l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated

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HYG053N10NS1D/U/V N-Channel Enhancement Mode MOSFET HYG053N10NS1D/U/V Feature HYG053N10NS1D/U/V Pin Description  100V/95A RDS(ON)=5.2mΩ(typ.)@VG

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l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche R

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PD - 91483C IRF9540NS/L HEXFET® Power MOSFET Advanced Process Technology Surface Mount (IRF9540S) l Low-profile through-hole (IRF9540L) l 175°C Opera

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Cell Type N-150NS Specifications Nominal Capacity Nominal Voltage D d 135mAh 1.2V 4.5mA above 48Hrs. Standard Charging Current Charging Time Charge

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PC8171xNSZ1B Series PC8171xNSZ1B Series DIP 4pin High CMR, Low Input Current Photocoupler  Description PC8171xNSZ1B Series contains an IRED optical

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HYG042N10NS1P/B Feature  100V/160A RDS(ON)=3.5mΩ(typ.) @ VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Lead-Free and Green Devices Avail

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PC8171xNSZ0F Series PC8171xNSZ0F Series DIP 4pin High CMR, Low Input Current Photocoupler ■ Description PC8171xNSZ0F Series contains an IRED optica

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PC8171XNSZ Series PC8171 NSZ Series X Low Input Current Type Photocoupler s Features 1. Low input current type(IF=0.5mA) 2. High resistance to nois

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PC8171XNSZ Series PC8171 NSZ SeriesX Low Input Current Type Photocoupler s Features 1. Low input current type(IF=0.5mA) 2. High resistance to noise

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PC817XNNSZ0F Series DIP 4pin Photocoupler PC817XNNSZ0F ■Description PC817XNNSZ0F Series contains an IRED optically coupled to a phototransistor. It

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Isc N-Channel MOSFET Transistor IRF540NS ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·10

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HYG015N10NS1TA Feature  100V/380A RDS(ON)=1.2 mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Halogen-Free Devices Available (RoH

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l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated

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BSC035N10NS5 MOSFET OptiMOSTM 5 Power-Transistor, 100 V Features • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested • Sup

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N-Channel Enhancement Mode MOSFET HYG053N10NS1C2 Feature HYG053N10NS1C2 Pin Description  100V/95A RDS(ON)=4.6 mΩ(typ.)@VGS = 10V DDDD DDDD  10

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PC8141XNSZ Series PC8141 NSZ SeriesX AC Input, Low Input Current Type Photocoupler s Features 1. Low input current type (IF=0.5mA) 2. High resistan

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PD - 91352B IRF530NS IRF530NL HEXFET® Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D VDSS = 100V l Dynamic dv/dt Rating l

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