7.0ns Datasheet | Specifications & PDF Download

www.DataSheet4U.com PD - 94005A IRF630N IRF630NS IRF630NL Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Swit

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HYG053N10NS1P/B Feature  100V/120A RDS(ON)=4.8 mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Halogen-Free Devices Available (RoH

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l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated

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ITEM PAGE 1/ 9 CHIP CERAMIC INDUCTORS Features 1. SMD type chip inductors utilizing monolithic structure provide highly reliable surface mount appli

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BSC027N10NS5 MOSFET OptiMOSTM Power-Transistor, 100 V Features • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested • Super

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BSC320N20NS3 G MOSFET OptiMOSTM 3 Power-Transistor, 200 V Features • N-channel, normal level • Excellent gate charge x RDS(on) product (FOM) • Very l

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Cell Type N-150NS Specifications Nominal Capacity Nominal Voltage D d 135mAh 1.2V 4.5mA above 48Hrs. Standard Charging Current Charging Time Charge

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BSC040N10NS5SC MOSFET OptiMOSTM 5 Power-Transistor, 100 V Features • Dual-side cooled package with lowest Junction-top thermal resistance • 175°C rat

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Silan Microelectronics SVGP20110NT(S)(P7)_Datasheet 88A, 200V N-CHANNEL MOSFET DESCRIPTION SVGP20110NT(S)(P7) is an N-channel enhancement mode powe

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Silan Microelectronics SVG086R0NT(S)(D)(L5)_Datasheet 120A, 80V N-CHANNEL MOSFET DESCRIPTION SVG086R0NT(S)(D)(L5) is an N-channel enhancement mode

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HYG053N10NS1P/B Feature  100V/120A RDS(ON)=4.8 mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Halogen-Free Devices Available (RoH

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PC8141XNSZ Series PC8141 NSZ SeriesX AC Input, Low Input Current Type Photocoupler s Features 1. Low input current type (IF=0.5mA) 2. High resistan

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STP70NS04ZC N-channel clamped 8mΩ - 80A TO-220 Fully protected SAFeFET™ Power MOSFET Features Type VDSS RDS(on) STP70NS04ZC Clamped < 10mΩ ■ Low

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HYG053N10NS1D/U/V N-Channel Enhancement Mode MOSFET HYG053N10NS1D/U/V Feature HYG053N10NS1D/U/V Pin Description  100V/95A RDS(ON)=5.2mΩ(typ.)@VG

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PC8171XNSZ Series PC8171 NSZ Series X Low Input Current Type Photocoupler s Features 1. Low input current type(IF=0.5mA) 2. High resistance to nois

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Silan Microelectronics SVG10120NSA_Datasheet 16A, 100V N-CHANNEL MOSFET DESCRIPTION SVG10120NSA is an N-channel enhancement mode power MOS field ef

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l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated

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