70-100V Datasheet | Specifications & PDF Download

FQB70N10 / FQI70N10 August 2000 QFET FQB70N10 / FQI70N10 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effe

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Non-Polar Aluminum Electrolytic Capacitors RADIAL LEADS NON-POLARIZED ALUMINUM ELECTROLYTIC CAPACITORS FEATURES • DESIGNED FOR APPLICATIONS WITH REVER

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0.5A 150KHz 100V Buck DC to DC Converter Datasheet XL7016 Features „ Operation Voltage from 12V to 90V „ Maximum Duty Cycle up to 100% „ Minimum Dro

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FQB70N10 / FQI70N10 August 2000 QFET FQB70N10 / FQI70N10 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effe

Rating: 1 ★ (4 votes)

Rating: 1 ★ (4 votes)

Datasheet 0.6A 150KHz 100V Buck DC to DC Converter XL7025 Features  Maximum Input Voltage 100V  Output Adjustable from 1.25V to 20V  Maximum Dut

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HAF70009 Data Sheet August 1999 File Number 4770 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFET This N-Channel power MOSFET is manufactured us

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Surface Mount Aluminum Electrolytic Capacitors FEATURES • CYLINDRICAL V-CHIP CONSTRUCTION FOR SURFACE MOUNTING • AVAILABLE WITH ANTI-VIBRATION WIDE TE

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FQAF70N10 August 2000 QFET FQAF70N10 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are p

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FQP70N10 August 2000 QFET FQP70N10 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are pro

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JANSR2N7292 Formerly FRF150R4 June 1998 25A, 100V, 0.070 Ohm, Rad Hard, N-Channel Power MOSFET Description The Intersil Corporation has designed a se

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5.0SMDJ16A - 5.0SMDJ100A Taiwan Semiconductor 5000W, 16V - 100V Surface Mount Transient Voltage Suppressor FEATURES ● 5000 watts peak pulse power ca

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Rating: 1 ★ (3 votes)

Rating: 1 ★ (3 votes)

Features  BVCEO > 100V  BVCBO > 100V  IC = 1.5A High Continuous Current  hFE > 10k for very High Gain @100mA  Lead-Free Finish; RoHS Compliant (N

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2.1A 150KHz 100V Buck DC to DC Converter Datasheet XL7036 Features „ Operation Voltage from 12V to 90V „ Maximum Duty Cycle up to 100% „ Minimum Dro

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LTC7062 100V Dual High-Side MOSFET Gate Driver FEATURES n Unique Symmetric Floating Gate Driver Architecture n High Noise Immunity, Tolerates ±10V Gr

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OC6702 100V MOS LED OC6702 100V NMOS 、 LED 。 OC6702 ，， 。 OC6702 ， LED ， LED 。 EN PWM ， LED 。 OC6702 VDD ， ， 。 OC6702 ESOP8 。 SW 。

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ADVANCEADDIVNAFNOCREM IANTIFOONRMATION DMHC10H170SFJ 100V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE Product Summary Features Device BVDSS Q1

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FDD3670 January 2000 ADVANCE INFORMATION FDD3670 100V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed spec

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