HAF70009 Datasheet - Intersil Corporation

HAF70009 56A/ 100V/ 0.025 Ohm/ N-Channel UltraFET Power MOSFET

HAF70009 Data Sheet August 1999 File Number 4770 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applica.

HAF70009 Features

* 56A, 100V

* Simulation Models - Temperature Compensated PSPICE® and SABER© Electrical Models - Spice and Saber Thermal Impedance Models - www.intersil.com

* Peak Current vs Pulse Width Curve

* UIS Rating Curve

* Related Literature - TB334, “Guidelines for So

HAF70009_IntersilCorporation.pdf