70-90 Datasheet | Specifications & PDF Download

MMIS70R900P Datasheet MMIS70R900P 700V 0.9Ω N-channel MOSFET  Description MMIS70R900P is power MOSFET using magnachip’s advanced super junction tech

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BTG7090-2EPL Datasheet PROFET™ Load Guard Smart high-side power switch Features • High-side switch with diagnosis and embedded protection • Part of

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IPD70R900P7S MOSFET 700V CoolMOSª P7 Power Transistor CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to th

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more than you expect Discrete Single Port 10/100 Base-T PDSO-G16 LANDatacom www.DataSheet4U.com Typical Common Electrical Characteristics 1 Inductan

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BTS7090-2EPL Datasheet PROFET™ +2 12V Smart high-side power switch Features • High-side switch with diagnosis and embedded protection • Part of PROF

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C3M0900170D 1700V 900mΩ Silicon Carbide Power MOSFET N-Channel Enhancement Mode Features • High blocking voltage with low on-resistance • High-spee

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IPLK70R900P7 MOSFET 700V CoolMOSª P7 Power Transistor CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to th

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E3M0900170J 1700V 900mΩ Silicon Carbide Power MOSFET N-Channel Enhancement Mode Features • High blocking voltage with low on-resistance • High-speed

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E3M0900170D 1700V 900mΩ Silicon Carbide Power MOSFET N-Channel Enhancement Mode Features • High blocking voltage with low on-resistance • High-speed

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C3M0900170J 1700V 900mΩ Silicon Carbide Power MOSFET N-Channel Enhancement Mode Features • High blocking voltage with low on-resistance • High-speed

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C3M0900170M 1700V 900mΩ Silicon Carbide Power MOSFET N-Channel Enhancement Mode Features Package • Fully isolated package for simplified a

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BTG7090-1EPL Datasheet PROFET™ Load Guard Smart high-side power switch Features • High-side switch with diagnosis and embedded protection • Part of

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DPAK GANE190-700BBA 700 V, 190 mOhm Gallium Nitride (GaN) FET in DPAK package 13 March 2025 Product data sheet 1. General description The GANE190

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ESMT Preliminary EMH7090 6A HV Asynchronous 500kHz Boost Converter General Description The EMH7090 is a monolithic asynchronous boost DC-DC conver

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SHEN ZHEN ELITE CHIP MICROCIRCUIT CO.,LTD EC190708- 09F6-19E7 3 ． ：DC 2.4-5.0V K1， OUT ，，。 3 ，。 3 ，OUT 。 . （VDD=5.0V TA=25℃）

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NCE70T900I，NCE70T900K N-Channel Super Junction Power MOSFET Ⅲ General Description The series of devices use advanced trench gate super junction tech

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() Features • CRM(CQ) Super_Junction technology • Much lower Ron*A performance for On-state efficiency • Better efficiency due to very low FOM CRJD90

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CMX90G702 6 - 18 GHz Positive Gain-Slope Amplifier +2dB Description The CMX90G702 is a low-power 50 Ω gain block suitable for a wide variety of wirel

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