70-90 Datasheet | Specifications & PDF Download

more than you expect Discrete Single Port 10/100 Base-T PDSO-G16 LANDatacom www.DataSheet4U.com Typical Common Electrical Characteristics 1 Inductan

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FDB0190N807L N-Channel PowerTrench® MOSFET March 2016 FDB0190N807L N-Channel PowerTrench® MOSFET 80 V, 270 A, 1.7 mΩ Features „ Max rDS(on) = 1.7 m

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MMIS70R900P Datasheet MMIS70R900P 700V 0.9Ω N-channel MOSFET  Description MMIS70R900P is power MOSFET using magnachip’s advanced super junction tech

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IPD70R900P7S MOSFET 700V CoolMOSª P7 Power Transistor CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to th

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SHEN ZHEN ELITE CHIP MICROCIRCUIT CO.,LTD EC190708- 09F6-19E7 3 ． ：DC 2.4-5.0V K1， OUT ，，。 3 ，。 3 ，OUT 。 . （VDD=5.0V TA=25℃）

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ICs for Information Equipment AN7090FHQ Peripheral analog IC for audio signal processing s Overview The AN7090FHQ is a one chip IC of audio signal pr

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ICs for Information Equipment AN7090FHQ Peripheral analog IC for audio signal processing s Overview The AN7090FHQ is a one chip IC of audio signal pr

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BAT 165 Silicon Schottky Diode Preliminary data • Low-power Schottky rectifier diode • Miniature plastic package for surface mounting (SMD) 2 1 VPS

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Silicon Schottky Diode BAT 65 Features • Low-power Schottky rectifier diode • For low-loss, fast-recovery rectification, meter protection, bias isol

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BB 664 Silicon Variable Capacitance Diode Preliminary data • For VHF TV-tuners • High capacitance ratio • Low series inductance • Low series resistanc

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MOSPEC Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers …Using the Schottky Barrier principle with a Molybdenum barrier metal. These sta

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MAAV-007090 Voltage Variable Absorptive Attenuator, 1700 - 2000 MHz Features  Input IP3: +31 dBm Min (Full Attenuation Range)  Input IP3 is 15 -20 d

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