HiPerFASTTM IGBT LightspeedTM Series IXGA 7N60C I.
JilinSino
JCS7N60C - N-CHANNEL MOSFET
R 7A,600V,RDS=1.2 @VGS=10V ( 38nC) Crss( 23pF) dv/dt * :607A VDSS ID T=25 IDM( 1) VGSS EA S 2 IAR 1 EAR 1 dv/dt 3 PD TC=25 TJ TSTG TL 6.
Fairchild Semiconductor
HGTD7N60C3S - UFS Series N-Channel IGBTs
Data Sheet HGTD7N60C3S, HGTP7N60C3 December 2001 14A, 600V, UFS Series N-Channel IGBTs The HGTD7N60C3S and HGTP7N60C3 are MOS gated high voltage swi.
WAYON
WMN07N60C2 - Super Junction Power MOSFET
WMN07N60C2 WMK07N60C2 600V 1.0Ω Super Junction Power MOSFET Description WMOSTM C2 is Wayon’s 2nd generation super junction MOSFET family that is util.
WAYON
WMK07N60C2 - Super Junction Power MOSFET
WMN07N60C2 WMK07N60C2 600V 1.0Ω Super Junction Power MOSFET Description WMOSTM C2 is Wayon’s 2nd generation super junction MOSFET family that is util.
WAYON
WMP07N60C2 - Super Junction Power MOSFET
WML07N60C2, WMH07N60C2, WMM07N60C2 WMO07N60C2, WMP07N60C2, WMG07N60C2 600V 1.0Ω Super Junction Power MOSFET Description WMOSTM C2 is Wayon’s 2nd gene.
WAYON
WMF07N60C2 - Super Junction Power MOSFET
WMF07N60C2 600V 1.0Ω Super Junction Power MOSFET Description WMOSTM C2 is Wayon’s 2nd generation super junction MOSFET family that is utilizing charg.
CITC
MH07N60CT - Silicon N-Channel Power MOSFET
MH07N60CT 600V Silicon N-Channel Power MOSFET ■ Features • Fast switching. • ESD improved capability. • Low gate charge. • Low reverse transfer capac.
Intersil
HGTG27N60C3DR - N-Channel IGBT
www.DataSheet4U.com CT ODU ODUCT R P PR TE OLE UTE OBS UBSTIT 0B3D E S G30N6 SIBL HGData T S Sheet O P TM HGTG27N60C3DR June 2000 File Number 4262.1 .
Intersil Corporation
D7N60C3S - HGTD7N60C3S
HGTD7N60C3S, HGTP7N60C3 Data Sheet January 2000 File Number 4141.3 14A, 600V, UFS Series N-Channel IGBTs The HGTD7N60C3S and HGTP7N60C3 are MOS gated.
Infineon Technologies
07N60C2 - SPA07N60C2
www.DataSheet4U.net Final data SPP07N60C2, SPB07N60C2 SPA07N60C2 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • U.
Infineon
07N60C3 - Power Transistor
SPP07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS @ Tjmax.
HARRIS
HGTD7N60C3S - UFS Series N-Channel IGBT
HGTD7N60C3, S E M I C O N D U C T O R HGTD7N60C3S, HGTP7N60C3 June 1996 14A, 600V, UFS Series N-Channel IGBT Features • 14A, 600V at TC = +25oC • 6.
Fairchild Semiconductor
HGTD7N60C3 - 14A/ 600V/ UFS Series N-Channel IGBTs
S E M I C O N D U C T O R HGTD7N60C3, HGTD7N60C3S, HGTP7N60C3 14A, 600V, UFS Series N-Channel IGBTs Packaging JEDEC TO-220AB EMITTER COLLECTOR GATE .
Fairchild Semiconductor
HGTP7N60C3D - N-Channel IGBT
HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes September 2005 HGTP7N60C3D, HGT1S7.
WAYON
WML07N60C2 - Super Junction Power MOSFET
WML07N60C2, WMH07N60C2, WMM07N60C2 WMO07N60C2, WMP07N60C2, WMG07N60C2 600V 1.0Ω Super Junction Power MOSFET Description WMOSTM C2 is Wayon’s 2nd gene.
WAYON
WMH07N60C2 - Super Junction Power MOSFET
WML07N60C2, WMH07N60C2, WMM07N60C2 WMO07N60C2, WMP07N60C2, WMG07N60C2 600V 1.0Ω Super Junction Power MOSFET Description WMOSTM C2 is Wayon’s 2nd gene.
HARRIS
HGTP7N60C3 - UFS Series N-Channel IGBT
HGTD7N60C3, S E M I C O N D U C T O R HGTD7N60C3S, HGTP7N60C3 June 1996 14A, 600V, UFS Series N-Channel IGBT Features • 14A, 600V at TC = +25oC • 6.
HARRIS
HGT1S7N60C3D - UFS Series N-Channel IGBT
HGTP7N60C3D, HGT1S7N60C3D, SEMICONDUCTOR HGT1S7N60C3DS January 1997 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Feat.
HARRIS
HGT1S7N60C3DS - UFS Series N-Channel IGBT
HGTP7N60C3D, HGT1S7N60C3D, SEMICONDUCTOR HGT1S7N60C3DS January 1997 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Feat.
CITC
MJU07N60CT - Power MOSFET
Chip Integration Technology Corporation MJU07N60CT 600V Super Junction Power MOSFET ■ Features • High speed power switching • 100% UIS tested, 100% .