7N60C Datasheet | Specifications & PDF Download

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SPP07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS @ Tjmax

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MH07N60CT 600V Silicon N-Channel Power MOSFET ■ Features • Fast switching. • ESD improved capability. • Low gate charge. • Low reverse transfer capac

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MHF07N60CT MHF07N60CT Document ID : DS-21M55 Revised Date : 2015/09/16 Revision : C1 MHF07N60CT Document ID : DS-21M55 Revised Date : 2015/09/16 Revi

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www.DataSheet4U.com HiPerFASTTM IGBT LightspeedTM Series IXGA 7N60C IXGP 7N60C VCES IC25 VCE(sat) tfi = 600 V = 14 A = 2.7 V = 45 ns Symbol VCES

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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 70mΩ@VGS=10V ·Fully characterized avalanche voltage and curre

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HiPerFASTTM IGBT LightspeedTM Series IXGA 7N60C IXGP 7N60C VCES IC25 VCE(sat) tfi = 600 V = 14 A = 2.7 V = 45 ns Symbol VCES VCGR VGES VGEM IC25 I

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Chip Integration Technology Corporation MJU07N60CT 600V Super Junction Power MOSFET ■ Features • High speed power switching • 100% UIS tested, 100%

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IXKH 47N60C CoolMOS™ 1) Power MOSFET Low RDSon, high VDSS Superjunction MOSFET D VDSS = 600 V ID25 = 47 A RDS(on) max = 70 mΩ TO-247 G G D S S q

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HGTP7N60C3D, HGT1S7N60C3DS Data Sheet January 2000 File Number 4150.2 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HG

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www.DataSheet4U.net Final data SPP07N60C2, SPB07N60C2 SPA07N60C2 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • U

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N R N-CHANNEL MOSFET JCS7N60 MAIN CHARACTERISTICS Package ID 7.0 A VDSS 600 V Rdson（@Vgs=10V） 1.2 Ω Qg 54 nC    LED APPLICATIO

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HGTP7N60C3D, HGT1S7N60C3D, SEMICONDUCTOR HGT1S7N60C3DS January 1997 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Feat

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HiPerFASTTM IGBT with Diode IXGA 7N60CD1 IXGP 7N60CD1 LightspeedTM Series Preliminary Data Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC

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HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes September 2005 HGTP7N60C3D, HGT1S7

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HGTD7N60C3, S E M I C O N D U C T O R HGTD7N60C3S, HGTP7N60C3 June 1996 14A, 600V, UFS Series N-Channel IGBT Features • 14A, 600V at TC = +25oC • 6

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