7N80 Datasheet | Specifications & PDF Download

CoolMOS® Power Transistor Features • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified accord

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UNISONIC TECHNOLOGIES CO., LTD 7N80 Power MOSFET 7.0A, 800V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7N80 is a N-channel mode power MOSFET using

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SVF7N80T/F/KL_Datasheet 7A, 800V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N80T/F/KL is an N-channel enhancement mode power MOS field effect transisto

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UNISONIC TECHNOLOGIES CO., LTD 7N80-C 7.0A, 800V NHANNEL POWER MOSFET  DESCRIPTION The UTC 7N80-C is a N-channel mode power MOSFET using UTC’s advanc

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K7N803609B K7N803209B K7N801809B Preliminary 256Kx36 & 256Kx32 & 512Kx18 Pipelined NtRAMTM Document Title 256Kx36 & 256Kx32 & 512Kx18-Bit Pipelined

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STF17N80K5 N-channel 800 V, 0.29 Ω typ., 14 A MDmesh™ K5 Power MOSFET in a TO-220FP package Datasheet - production data TO-220FP Figure 1: Internal

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June 2007 PFP7N80 / PFF7N80 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances

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TSP7N80M / TSF7N80M TSP7N80M / TSF7N80M 800V N-Channel MOSFET General Description This Power MOSFET is produced using True semi‘s advanced planar str

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N R N-CHANNEL MOSFET JCS7N80C MAIN CHARACTERISTICS Package ID 7A VDSS 800 V Rdson-max（@Vgs=10V） 1.8Ω Qg-typ 32nC   APPLICATIONS

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K7N803609B K7N801809B 256Kx36 & 512Kx18 Pipelined NtRAMTM 8Mb NtRAMTM Specification 100 TQFP with Pb & Pb-Free (RoHS compliant) INFORMATION IN THIS

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www.DataSheet4U.com Preliminary data SPP17N80C2 SPB17N80C2 Cool MOS™ Power Transistor Feature · · · · · · · C O OLMOS Power Semiconductors New re

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STP17N80K5 N-channel 800 V, 0.29 Ω typ., 14 A MDmesh™ K5 Power MOSFET in a TO-220 package Datasheet - production data Figure 1: Internal schematic d

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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤290mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to

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N R N-CHANNEL MOSFET JCS7N80C MAIN CHARACTERISTICS Package ID 7A VDSS 800 V Rdson-max（@Vgs=10V） 1.8Ω Qg-typ 32nC   APPLICATIONS

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Silicon N-Channel Power MOSFET ○R CS7N80F A9R General Description： CS7N80F A9R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-a

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