8203 Datasheet | Specifications & PDF Download



   








  









     












 

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ATA8203/ATA8204/ATA8205 Industrial UHF ASK/FSK Receiver DATASHEET Features ● Frequency receiving range of (3 versions) ● f0 = 312.5MHz to 317.5MHz or

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PE8203 N-Channel Enhancement Mode Power MOSFET Description The PE8203 uses advanced trench technology to provide excellent RDS(ON), low gate charge

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SPHE8203R Design Guide V1.0 – May 20, 2008 19, Innovation First Road • Science Park • Hsin-Chu • Taiwan 300 • R.O.C. Tel: 886-3-578-6005 Fax: 886-3-

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SMT CURRENT SENSE TRANSFORMERS P820X Series Height: 5.1mm Max* Footprint: 8.4mm x 7.2mm Max Current Rating: up to 10A Frequency Range: 50kHz to 1MHz L

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LYF82031 33V, 3.5A Monolithic Step-Down Switching Regulator 1 Features  3.5A continuous output current capability  Up to 98% duty  4.2V to 33V wid

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www.DataSheet4U.com PD - 95095A SMPS MOSFET IRLR8203PbF IRLU8203PbF HEXFET® Power MOSFET Applications l High Frequency Isolated DC-DC Converters w

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PE8203A N-Channel Enhancement Mode Power MOSFET Description The PE8203A uses advanced trench technology to provide excellent RDS(ON), low gate charg

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DM8203/DM8203I 10/100 Mbps 3-port Ethernet Switch Controller with MII / RMII Interface DAVICOM Semiconductor, Inc. DM8203 / DM8203I 10/100 Mbps 3-port

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ATA8203/ATA8204/ATA8205 Industrial UHF ASK/FSK Receiver DATASHEET Features ● Frequency receiving range of (3 versions) ● f0 = 312.5MHz to 317.5MHz or

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ATA8203/ATA8204/ATA8205 Industrial UHF ASK/FSK Receiver DATASHEET Features ● Frequency receiving range of (3 versions) ● f0 = 312.5MHz to 317.5MHz or

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P3P8203A General Purpose Peak EMI Reduction Device Functional Description P3P8203A is a versatile, 3.3 V LVCMOS Peak EMI reduction device. P3P8203A a

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NAU82039 3.2W Mono Filter-Free Class-D Audio Amplifier 1 Description The NAU82039 is a mono high efficiency filter-free Class-D audio amplifier with

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490 826 Lenze Global Drive Frequency inverters 8200/9300 vector 0.37 … 90 kW Lenze Drive Systems GmbH, Postfach 10 13 52, D-31763 Hameln Site: Hans-

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Afficher/masquer signets EDB8200FR R1W Ä R1Wä Instructions de mise en service Lenze Postfach 101352 ,31763 HAMELN Typ Id.-NR Fert.-Nr Serien-Nr.

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Dual N-Channel MOSFET DTS8203 www.din-tek.jp PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) 0.012 at VGS = 4.5 V 0.015 at VGS = 2.5 V ID (A) 7.6 6.5 FEA

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www.DataSheet4U.com PD - 94404 SMPS MOSFET IRLR8203 IRLU8203 HEXFET® Power MOSFET Applications l High Frequency Isolated DC-DC Converters with Syn

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www.DataSheet4U.com NGP8203N Ignition IGBT 20 A, 400 V, N−Channel TO−220 This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithi

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Data Sheet High Common-Mode Voltage, Single-Supply Difference Amplifier AD8203 FEATURES High common-mode voltage range −6 V to +30 V at a 5 V supply

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