Part number:
PE8203
Manufacturer:
semi one
File Size:
826.63 KB
Description:
N-channel enhancement mode power mosfet.
* VDS = 20V, ID = 6A RDS(ON) < 28mΩ @ VGS=2.5V RDS(ON) < 20mΩ @ VGS=4.5V
* High Power and current handing capability
* Lead free product is acquired
* Surface Mount Package D1 G1 G2 D2 S1 S2 Schematic diagram Application
* Battery protection
* Load switch
* Power manage
PE8203
semi one
826.63 KB
N-channel enhancement mode power mosfet.
📁 Related Datasheet
PE8200 - N-Channel Enhancement Mode Power MOSFET
(semi one)
PE8200
N-Channel Enhancement Mode Power MOSFET
Description
The PE8200 uses advanced trench technology to provide excellent RDS(ON), low gate charge .
PE8200 - Trimer
(PE)
..
.
PE8203A - N-Channel Enhancement Mode Power MOSFET
(semi one)
PE8203A
N-Channel Enhancement Mode Power MOSFET
Description
The PE8203A uses advanced trench technology to provide excellent RDS(ON), low gate charg.
PE8205 - N-Channel Enhancement Mode Power MOSFET
(semi one)
PE8205
N-Channel Enhancement Mode Power MOSFET
Description
The 8205 uses advanced trench technology to provide excellent RDS(ON), low gate charge an.
PE8205 - N-Channel Enhancement Mode Power MOSFET
(ChipSourceTek)
N-Channel Enhancement Mode Power MOSFET
Description
The PE8205 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It ca.
PE8205A - N-Channel Enhancement Mode Power MOSFET
(semi one)
PE8205A
N-Channel Enhancement Mode Power MOSFET
Description
The PE8205A uses advanced trench technology to provide excellent RDS(ON), low gate charg.
PE8205A - N-Channel Power MOSFET
(ChipSourceTek)
N-Channel Enhancement Mode Power MOSFET
Description
The PE8205A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It c.
PE8205L - N-Channel Power MOSFET
(ChipSourceTek)
N-Channel Enhancement Mode Power MOSFET
Description
The PE8205L uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It c.
