PE8250M - N-Channel Enhancement Mode Power MOSFET
PE8250M Features
* VDS = 18V, ID = 50A Schematic diagram RDS(ON) < 4.2mΩ @ VGS=4.5V RDS(ON) < 6mΩ @ VGS=2.5V RDS(ON) < 10mΩ @ VGS=1.8V ESD Rating: 4000V HBM
* High Power and current handing capability
* Lead free product is acquired
* Surface Mount Package k Application
* PWM applications e