PE8250M Datasheet, Mosfet, ChipSourceTek

✔ PE8250M Features

VDS = 18V, ID = 50A Schematic diagram RDS(ON) < 4.2mΩ @ VGS=4.5V RDS(ON) < 6mΩ @ VGS=2.5V RDS(ON) < 10mΩ @ VGS=1.8V ESD Rating: 4000V HBM
High Power and current h

✔ PE8250M Application

It is ESD protected. PE8250M General Features
VDS = 18V, ID = 50A Schematic diagram RDS(ON) < 4.2mΩ @

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PE8250M

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ChipSourceTek

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📄 Datasheet

Description:

N-channel enhancement mode power mosfet. The PE8250M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of app

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PE8250M N-Channel Enhancement Mode Power MOSFET ChipSourceTek