PE8209HN - N-Channel Enhancement Mode Power MOSFET
PE8209HN Features
* VDS = 18V, ID = 9A RDS(ON) < 11mΩ @ VGS=4.5V RDS(ON) < 12mΩ @ VGS=3.8V RDS(ON) < 14mΩ @ VGS=3.1V RDS(ON) < 16mΩ @ VGS=2.5V Schematic diagram ESD Rating: 4000V HBM
* High Power and current handing capability
* Lead free product is acquired
* Surface Mount Package k Application e
