PE8209HN - N-Channel Enhancement Mode Power MOSFET

ChipSourceTek

Datasheet Details

Part number	PE8209HN
Manufacturer	ChipSourceTek
File Size	684.12 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	PE8209HN-ChipSourceTek.pdf

The PE8209HN uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

VDS = 18V, ID = 9A RDS(ON) < 11mΩ @ VGS=4.5V RDS(ON) < 12mΩ @ VGS=3.8V RDS(ON) < 14mΩ @ VGS=3.1V RDS(ON) < 16mΩ @ VGS=2.5V Schematic diagram ESD Rating: 4000V HBM.
High Power and current handing capability.
Lead free product is acquired.
Surface Mount Package k.

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Published: Mar 4, 2025 |