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PE8209HN N-Channel Enhancement Mode Power MOSFET

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Description

N-Channel Enhancement Mode Power MOSFET .
The PE8209HN uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

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Datasheet Specifications

Part number
PE8209HN
Manufacturer
ChipSourceTek
File Size
684.12 KB
Datasheet
PE8209HN-ChipSourceTek.pdf
Description
N-Channel Enhancement Mode Power MOSFET

Features

* VDS = 18V, ID = 9A RDS(ON) < 11mΩ @ VGS=4.5V RDS(ON) < 12mΩ @ VGS=3.8V RDS(ON) < 14mΩ @ VGS=3.1V RDS(ON) < 16mΩ @ VGS=2.5V Schematic diagram ESD Rating: 4000V HBM
* High Power and current handing capability
* Lead free product is acquired

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