Datasheet4U Logo Datasheet4U.com

PE80H11 N-Channel Enhancement Mode Power MOSFET

PE80H11 Description

N-Channel Enhancement Mode Power MOSFET .
The PE80H11 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

PE80H11 Features

* VDS =80V,ID =110A RDS(ON)

📥 Download Datasheet

Preview of PE80H11 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
PE80H11
Manufacturer
semi one
File Size
823.08 KB
Datasheet
PE80H11-semione.pdf
Description
N-Channel Enhancement Mode Power MOSFET

📁 Related Datasheet

  • PE8050 - NPN-PNP General Purpose Complementary Amplifiers & Output Drivers (Fairchild Semiconductor)
  • PE80Q04N - SBD MODULE (Nihon Inter Electronics)
  • PE80QL03N - SBD (Nihon Inter Electronics)
  • PE8124HM1 - N-Channel Enhancement Mode Power MOSFET (ChipSourceTek)
  • PE8205L - N-Channel Power MOSFET (ChipSourceTek)
  • PE8207 - N-Channel Enhancement Mode Power MOSFET (ChipSourceTek)
  • PE8207C - N-Channel Power MOSFET (ChipSourceTek)
  • PE8209HM1 - N-Channel Enhancement Mode Power MOSFET (ChipSourceTek)

📌 All Tags

semi one PE80H11-like datasheet