PE80H11 Datasheet, Mosfet, semi one

PE80H11 Features

• Mosfet
• VDS =80V,ID =110A RDS(ON) <8mΩ @ VGS=10V
• High density cell design for ultra low Rdson
• Fully characterized avalanche voltage and current
• Good stab

PDF File Details

Part number:

PE80H11

Manufacturer:

semi one

File Size:

823.08kb

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📄 Datasheet

Description:

N-channel enhancement mode power mosfet. The PE80H11 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide va

PE80H11 Application

• Applications General Features
• VDS =80V,ID =110A RDS(ON) <8mΩ @ VGS=10V
• High density cell design for ultra low Rdson
• F

TAGS

PE80H11

semi one

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