PE8200 - N-Channel Enhancement Mode Power MOSFET
PE8200 Features
* VDS = 20V,ID =12A RDS(ON) < 10mΩ @ VGS=4.5V RDS(ON) < 13mΩ @ VGS=2.5V
* High power and current handing capability
* Lead free product is acquired
* Surface mount package D1 G1 G2 D2 S1 S2 Schematic diagram Marking and pin assignment Application
* Uni-directional load swit
