8N40 Datasheet | Specifications & PDF Download

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NGD18N40CLB, NGD18N40ACLB Ignition IGBT, 18 A, 400 V N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic cir

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7$% 7$% ,3$.     72  STGB18N40LZT4, STGD18N40LZ, STGP18N40LZ Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ Datasheet - pr

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IRF340-343/IRF740-743 T-39-13 MTM8N35/8N40 N-Channel Power MOSFETs 10A, 350V/400V Description These devices are n-channel, enhancement mode, power MO

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NGB18N40CLB, NGB18N40ACLB Ignition IGBT 18 Amps, 400 Volts N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolit

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www.DataSheet4U.com NGB18N40CLBT4 Ignition IGBT 18 Amps, 400 Volts N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features

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NGB18N40CLB, NGB18N40ACLB Ignition IGBT 18 Amps, 400 Volts N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolit

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NGD18N40CLB, NGD18N40ACLB Ignition IGBT, 18 A, 400 V N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic cir

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MS48N40 N-Channel 40-V (D-S) MOSFET Description These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on

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NGD18N40CLB, NGD18N40ACLB Ignition IGBT, 18 A, 400 V N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic cir

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NGD18N40CLB, NGD18N40ACLB Ignition IGBT, 18 A, 400 V N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic cir

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7$% 7$% ,3$.     72  STGB18N40LZT4, STGD18N40LZ, STGP18N40LZ Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ Datasheet - pr

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7$% 7$% ,3$.     72  STGB18N40LZT4, STGD18N40LZ, STGP18N40LZ Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ Datasheet - pr

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UNISONIC TECHNOLOGIES CO., LTD 18N40 400V N-CHANNEL POWER MOSFET „ DESCRIPTION Power MOSFET The UTC 18N40 is a 400V N-channel Power MOSFET, providin

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Production specification N-Channel Enhancement Mode Field Effect Transistor FEATURES  RDS(ON) =1.2Ω@VGS = 10V. Pb  Ultra Low gate charge (typica

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7$% 7$% ,3$.     72  STGB18N40LZT4, STGD18N40LZ, STGP18N40LZ Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ Datasheet - pr

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