8N80 Datasheet | Specifications & PDF Download

FQP8N80C / FQPF8N80C / FQPF8N80CYDTU — N-Channel QFET® MOSFET December 2013 FQP8N80C / FQPF8N80C / FQPF8N80CYDTU N-Channel QFET® MOSFET 800 V, 8.0 A

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STF8N80K5, STFI8N80K5 N-channel 800 V, 0.8 Ω typ., 6 A MDmesh™ K5 Power MOSFET in TO-220FP and I2PAKFP packages Datasheet − production data 3 2 1 TO

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Silan Microelectronics SVF8N80T/F/K_Datasheet 8A, 800V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF8N80T/F/K is an N-channel enhancement mode power MO

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FQA8N80 March 2001 QFET FQA8N80 800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produc

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Silicon N-Channel Power MOSFET CS8N80F A9H ○R General Description： CS8N80F A9H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMP8N80(

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AOK8N80 800V,7.4A N-Channel MOSFET General Description The AOK8N80 is fabricated using an advanced high voltage MOSFET process that is designed to de

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AOT8N80L/AOTF8N80 800V, 7.4A N-Channel MOSFET General Description Product Summary The AOT8N80L & AOTF8N80 have been fabricated using an advanced hi

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 800V D RDSON (MAX.) 1.35Ω ID 8A G UIS, 100% Tested S

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                                 Main Product Characteristics: SSF8N80ZF  VDSS 800V RDS(on) 1.1Ω (typ.) ID 8A Features and Benefits:    TO-220F

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800V N-Channel MOSFETs PMP08N80 General Description These N-Channel enhancement mode power field effect transistors are planar stripe, DMOS technolo

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FQP8N80C / FQPF8N80C / FQPF8N80CYDTU — N-Channel QFET® MOSFET December 2013 FQP8N80C / FQPF8N80C / FQPF8N80CYDTU N-Channel QFET® MOSFET 800 V, 8.0 A,

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMP8N80(

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FQA8N80C 800V N-Channel MOSFET September 2006 QFET FQA8N80C 800V N-Channel MOSFET Features • • • • • • 8.4A, 800V, RDS(on) = 1.55Ω @VGS = 10 V Low g

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CoolMOSTM Power Transistor Features • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified accor

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SSFP8N80 StarMOST Power MOSFET ■ Extremely high dv/dt capability ■ Low Gate Charge Qg results in Simple Drive Requirement ■ 100% avalanche tested ■ G

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