8N80 Datasheet | Specifications & PDF Download

FQP8N80C / FQPF8N80C / FQPF8N80CYDTU — N-Channel QFET® MOSFET December 2013 FQP8N80C / FQPF8N80C / FQPF8N80CYDTU N-Channel QFET® MOSFET 800 V, 8.0 A

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HiPerFETTM Power MOSFETs Q2-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Low intrinsic Rg, low trr Symbol VDSS VDGR VGSS VGSM

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CoolMOSTM Power Transistor Features • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified accor

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TF8N80-VB www.VBsemi.com TF8N80-VB Datasheet N-Channel 800V (D-S) Super Junction Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC)

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PFP8N80 / PFF8N80 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkabl

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Silicon N-Channel Power MOSFET CS8N80 A8H ○R General Description： CS8N80 A8H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-al

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HiPerFETTM Power MOSFETs Q2-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Low intrinsic Rg, low trr Symbol VDSS VDGR VGSS VGSM

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MSF8N80-G 800V N-Channel MOSFET GENERAL DESCRIPTION This Power MOSFET is produced using the advanced planar stripe, DMOS technology. This latest techn

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Preliminary Data Sheet HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS ID25 RDS(on) trr IXFH8N80 800

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PFP8N80 / PFF8N80 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkabl

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FQA8N80 March 2001 QFET FQA8N80 800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produc

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800V N-Channel MOSFETs PMP08N80 General Description These N-Channel enhancement mode power field effect transistors are planar stripe, DMOS technolo

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HiPerFETTM MOSFET Q2-Class (Electrically Isolated Back Surface) IXFR 38N80Q2 VDSS ID25 RDS(on) = = = 800 V 28 A 240 mΩ trr ≤ 250 ns Preliminary

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HiPerFETTM Power MOSFETs Q2-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Low intrinsic Rg, low trr Symbol VDSS VDGR VGSS VGSM

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7.8 Amps，800Volts N-Channel MOSFET ■ Description The HX8N80(C) N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high

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K8N80-VB K8N80-VB Datasheet Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) typ. at 25 ° C (Ω) Qg max. (nC) Qgs (nC) Qgd (n

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STF8N80K5, STFI8N80K5 N-channel 800 V, 0.8 Ω typ., 6 A MDmesh™ K5 Power MOSFET in TO-220FP and I2PAKFP packages Datasheet − production data 3 2 1 TO

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Silicon N-Channel Power MOSFET CS8N80F A9H ○R General Description： CS8N80F A9H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-

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STF8N80K5, STFI8N80K5 N-channel 800 V, 0.8 Ω typ., 6 A MDmesh™ K5 Power MOSFET in TO-220FP and I2PAKFP packages Datasheet − production data 3 2 1 TO

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