9-Mbit Datasheet | Pinout, Features, Price Comparison & PDF

512Kbit/1 Mbit / 2 Mbit Single Operating Voltage Serial Flash Memory With 100 MHz Dual-Output SPI Bus Interface Pm25LD512/010/ 020 FEATURES • Single

25Q16BSIG FEATURES ◆ 16M-bit Serial Flash -2048K-byte -256 bytes per programmable page ◆ Standard, Dual, Quad SPI -Standard SPI: SCLK, CS#, SI, SO, W

Uniform Sector 8Mbit Dual and Quad SPI Flash FEATURES ◆ GD25Q80 Speed 8M-bit Serial Flash -1024K-byte -256 bytes per programmable page Standard, Dua

512Kbit/1 Mbit / 2 Mbit Single Operating Voltage Serial Flash Memory With 100 MHz Dual-Output SPI Bus Interface Pm25LD512/010/ 020 FEATURES • Single

M27C4002 4 Mbit (256Kb x16) UV EPROM and OTP EPROM 5V ± 10% SUPPLY VOLTAGE in READ OPERATION FAST ACCESS TIME: 45ns LOW POWER CONSUMPTION: – Active Cu

HIGH SPEED-10 MBit/s LOGIC GATE OPTOCOUPLERS SINGLE-CHANNEL 6N137 HCPL-2601 HCPL-2611 DESCRIPTION The 6N137, HCPL-2601/2611 single-channel and HCPL-26

64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O Document Title 4Bank x 1M x 16bits Synchronous DRAM Revision History Revision No. 0.1 History Initi

CY62128EV30 MoBL® 1-Mbit (128K × 8) Static RAM 1-Mbit (128K × 8) Static RAM Features ■ Very high speed: 45 ns ■ Temperature ranges: ❐ Industrial: –40

K4S281632B CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Aug. 1999 * Samsung Electronics reserves the right to

M27C1001 1 Mbit (128Kb x8) UV EPROM and OTP EPROM s 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ACCESS TIME: 35ns LOW POWER CONSUMPTION: – Active Curre

Data Sheet, Rev. 1.2, June 2004 HYB25D512[40/80/16]0B[C/T] HYB25D512[40/80/16]0B[E/F] 512Mbit Double Data Rate SDRAM DDR SDRAM Memory Products Never s

M27C800 8 Mbit (1Mb x8 or 512Kb x16) UV EPROM and OTP EPROM s 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ACCESS TIME: 50ns BYTE-WIDE or WORD-WIDE CONF

M25P80 8 Mbit, Low Voltage, Serial Flash Memory With 25 MHz SPI Bus Interface PRELIMINARY DATA FEATURES SUMMARY s 8 Mbit of Flash Memory s Figure 1.

M29F040 4 Mbit (512Kb x8, Uniform Block) Single Supply Flash Memory NOT FOR NEW DESIGN M29F040 is replaced by the M29F040B 5V ± 10% SUPPLY VOLTAGE fo

K4S281632C-TI(P) CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 June 2001 * Samsung Electronics reserves the ri

512Kbit/1 Mbit / 2 Mbit Single Operating Voltage Serial Flash Memory With 100 MHz Dual-Output SPI Bus Interface Pm25LD512/010/ 020 FEATURES • Single

IS42S16160 16Meg x16 256-MBIT SYNCHRONOUS DRAM SEPTEMBER 2009 FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signal

CY7C1061AV33 16-Mbit (1 M × 16) Static RAM 16-Mbit (1 M × 16) Static RAM Features ■ High speed ❐ tAA = 10 ns ■ Low active power ❐ 990 mW (max) ■ Oper

M25P16 16 Mbit, Low Voltage, Serial Flash Memory With 50 MHz SPI Bus Interface FEATURES SUMMARY ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 16Mbit of Flash Memory Page Pr

HY29LV320 32 Mbit (2M x 16) Low Voltage Flash Memory KEY FEATURES n Single Power Supply Operation – Read, program and erase operations from 2.7 to 3.