9N90 Datasheet | Specifications & PDF Download

FMH09N90E Super FAP-E3 series Features Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by

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SVF9N90F/PN_Datasheet 9A, 900V N-CHANNEL MOSFET DESCRIPTION SVF9N90F/PN is an N-channel enhancement mode power MOS field effect transistor which is pr

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N-Channel MOSFET Applications: • Adaptor • LCD Panel Power Features: • Lead Free • Low ON Resistance • Low Gate Charge • Low Crss(typical 12pF) • Imp

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N-Channel MOSFET Applications: • Adaptor • LCD Panel Power Features: • Lead Free • Low ON Resistance • Low Gate Charge • Low Crss(typical 12pF) • Imp

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UNISONIC TECHNOLOGIES CO., LTD 9N90 9.0A, 900V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 9N90 uses UTC’s advanced proprietary, planar stripe, DMOS

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UNISONIC TECHNOLOGIES CO., LTD 9N90-C 9.0A, 900V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 9N90-C provide excellent RDS(ON), low gate charge and op

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FQA9N90C QFET FQA9N90C 900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using F

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TSA9N90M TSA9N90M 900V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. T

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Silicon N-Channel Power MOSFET ○R CS9N90 ANHD General Description： CS9N90 ANHD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self

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www.DataSheet.co.kr FMV09N90E Super FAP-E3 series Features Maintains both low power loss and low noise Lower RDS (on) characteristic More controllabl

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor FMH09N90E ·FEATURES ·With TO-3PN packaging ·Low on-resistance ·Low drive current ·Easy to use

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FQA9N90 March 2001 QFET FQA9N90 900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produc

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N-Channel MOSFET Applications: • ATX Power • LCD Panel Power ISA09N90A Pb Lead Free Package and Finish VDSS 900V RDS(on)(Typ) ID (Max) 1.2Ÿ 9.0A

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HFA9N90 July 2013 BVDSS = 900 V HFA9N90 900V N-Channel MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gat

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FQA9N90_F109 — N-Channel QFET® MOSFET FQA9N90_F109 N-Channel QFET® MOSFET 900 V, 8.6 A, 1.3 Ω May 2014 Features • 8.6 A, 900 V, RDS(on) = 1.3 Ω (Ma

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MSW9N90 900V N-Channel MOSFET Description This latest technology has been especially designed to minimize on-state resistance, have a high rugged aval

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isc N-Channel MOSFET Transistor ·DESCRIPTION ·Drain Current ID= 9A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Fast Switching Speed ·Minimum Lo

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMP9N90/

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Features  Low gate charge  Improved dv/dt capability  Improved ESD performance  RoHS compliant  JEDEC Qualification BVDSS 900V TMAN9N90AZ N-cha

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www.DataSheet.co.kr FMH09N90E Super FAP-E3 series Features Maintains both low power loss and low noise Lower RDS (on) characteristic More controllabl

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