9N90 Datasheet | Specifications & PDF Download

FMH09N90E Super FAP-E3 series Features Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by

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HM9N90 HM9N90 900V N-Channel MOSFET General Description This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology. This a

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UNISONIC TECHNOLOGIES CO., LTD 9N90 9.0A, 900V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 9N90 uses UTC’s advanced proprietary, planar stripe, DMOS

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Silicon N-Channel Power MOSFET ○R CS9N90 ANHD General Description： CS9N90 ANHD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self

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MSW9N90 900V N-Channel MOSFET Description This latest technology has been especially designed to minimize on-state resistance, have a high rugged aval

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N-Channel MOSFET Applications: • Adaptor • LCD Panel Power Features: • Lead Free • Low ON Resistance • Low Gate Charge • Low Crss(typical 12pF) • Imp

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May 2007 PFJ9N90 / PFW9N90 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances 

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Silicon N-Channel Power MOSFET CS9N90F A9D ○R General Description： CS9N90F A9HD the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-al

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N-Channel MOSFET Applications: • Adaptor • LCD Panel Power Features: • Lead Free • Low ON Resistance • Low Gate Charge • Low Crss(typical 12pF) • Imp

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N-Channel MOSFET Applications: • ATX Power • LCD Panel Power ISA09N90A Pb Lead Free Package and Finish VDSS 900V RDS(on)(Typ) ID (Max) 1.2Ÿ 9.0A

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PFP9N90E / PFF9N90E FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarka

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FQA9N90C_F109 — N-Channel QFET® MOSFET FQA9N90C_F109 N-Channel QFET® MOSFET 900 V, 9 A, 1.4 Ω Features • 9 A, 900 V, RDS(on) = 1.4 Ω (Max.) @ VGS = 1

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Silicon N-Channel Power MOSFET ○R CS9N90F A9RD-G General Description： CS9N90F A9RD-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by th

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Shantou Huashan Electronic Devices Co.,Ltd. HFH9N90 N-Channel Enhancement Mode Field Effect Transistor █ General Description These are N-Channel en

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PFP9N90E / PFF9N90E FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarka

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UNISONIC TECHNOLOGIES CO., LTD 9N90-C 9.0A, 900V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 9N90-C provide excellent RDS(ON), low gate charge and op

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May 2007 PFJ9N90 / PFW9N90 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances 

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FQA9N90C QFET FQA9N90C 900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using F

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AP09N90CW Advanced Power Electronics Corp. ▼ Minimize On-resistance ▼ Fast Switching ▼ Simple Drive Requirement N-CHANNEL ENHANCEMENT MODE POWER MOS

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HFA9N90 July 2013 BVDSS = 900 V HFA9N90 900V N-Channel MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gat

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