UNISONIC TECHNOLOGIES CO., LTD 9N90 9.0A, 900V N-C.
Truesemi
TSA9N90M - N-Channel MOSFET
TSA9N90M TSA9N90M 900V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. T.
Fairchild Semiconductor
FQA9N90C_F109 - MOSFET
FQA9N90C_F109 — N-Channel QFET® MOSFET FQA9N90C_F109 N-Channel QFET® MOSFET 900 V, 9 A, 1.4 Ω Features • 9 A, 900 V, RDS(on) = 1.4 Ω (Max.) @ VGS = 1.
Fuji Electric
FMH09N90E - N-CHANNEL SILICON POWER MOSFET
www.DataSheet.co.kr FMH09N90E Super FAP-E3 series Features Maintains both low power loss and low noise Lower RDS (on) characteristic More controllabl.
Fuji Electric
09N90E - FMH09N90E
FMH09N90E Super FAP-E3 series Features Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by .
Fairchild Semiconductor
FQA9N90_F109 - N-Channel QFET MOSFET
FQA9N90_F109 — N-Channel QFET® MOSFET FQA9N90_F109 N-Channel QFET® MOSFET 900 V, 8.6 A, 1.3 Ω May 2014 Features • 8.6 A, 900 V, RDS(on) = 1.3 Ω (Ma.
JILIN SINO
JCS9N90WT - N-CHANNEL MOSFET
N R N-CHANNEL MOSFET JCS9N90T MAIN CHARACTERISTICS Package ID VDSS Rdson-Max （Vgs=10V） Qg LED 9A 900 V 1.35 Ω 43 nC APPLICATIONS .
Truesemi
TSA9N90MZ - N-Channel MOSFET
TSA9N90MZ 900V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advan.
Winsemi
WFF9N90 - Silicon N-Channel MOSFET
WFF9N90 Product Description Silicon N-Channel MOSFET Features � 9A,900V,RDS(on)(Max1.35Ω)@VGS=10V � Ultra-low Gate charge(Typical 43nC) � Fast Switchi.
Maple Semiconductor
SLF9N90CZ - N-Channel MOSFET
SLP9N90CZ / SLF9N90CZ SLP9N90CZ / SLF9N90CZ 900V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced plana.
Fairchild Semiconductor
FQA9N90C - 900V N-Channel MOSFET
FQA9N90C QFET FQA9N90C 900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using F.
Advanced Power Electronics
AP09N90W-HF - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics Corp. AP09N90W-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche test D ▼ Fast Switching.
ON Semiconductor
FQA9N90C-F109 - N-Channel QFET MOSFET
FQA9N90C-F109 — N-Channel QFET® MOSFET FQA9N90C-F109 N-Channel QFET® MOSFET 900 V, 9 A, 1.4 Ω Features • 9 A, 900 V, RDS(on) = 1.4 Ω (Max.) @ VGS = 1.
UTC
9N90-C - N-CHANNEL MOSFET
UNISONIC TECHNOLOGIES CO., LTD 9N90-C 9.0A, 900V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 9N90-C provide excellent RDS(ON), low gate charge and op.
INCHANGE
AOTF9N90 - N-Channel MOSFET
isc N-Channel MOSFET Transistor AOTF9N90 FEATURES ·Drain Current –ID= 9A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Static Drain-Source On-Re.
JILIN SINO
JCS9N90BT - N-CHANNEL MOSFET
N R N-CHANNEL MOSFET JCS9N90T MAIN CHARACTERISTICS Package ID VDSS Rdson-Max （Vgs=10V） Qg LED 9A 900 V 1.35 Ω 43 nC APPLICATIONS .
JILIN SINO
JCS9N90ABT - N-CHANNEL MOSFET
N R N-CHANNEL MOSFET JCS9N90T MAIN CHARACTERISTICS Package ID VDSS Rdson-Max （Vgs=10V） Qg LED 9A 900 V 1.35 Ω 43 nC APPLICATIONS .
JILIN SINO
JCS9N90T - N-CHANNEL MOSFET
N R N-CHANNEL MOSFET JCS9N90T MAIN CHARACTERISTICS Package ID VDSS Rdson-Max （Vgs=10V） Qg LED 9A 900 V 1.35 Ω 43 nC APPLICATIONS .
Truesemi
TSF9N90M - N-Channel MOSFET
TSF9N90M TSF9N90M 900V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. T.
Silikron Semiconductor
SSF9N90ZH - MOSFET
Main Product Characteristics: VDSS 900V RDS(on) 1.2Ω (typ.) ID 9A Features and Benefits: TO-247 Advanced MOS.
Potens semiconductor
PMY09N90T - N-Channel MOSFETs
900V N-Channel MOSFETs PMY09N90T General Description These N-Channel enhancement mode power field effect transistors are using advanced super juncti.
