9N90 Datasheet | Specifications & PDF Download

UNISONIC TECHNOLOGIES CO., LTD 9N90 9.0A, 900V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 9N90 uses UTC’s advanced proprietary, planar stripe, DMOS

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Silicon N-Channel Power MOSFET ○R CS9N90 ANHD General Description： CS9N90 ANHD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self

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900V N-Channel MOSFETs PMY09N90T General Description These N-Channel enhancement mode power field effect transistors are using advanced super juncti

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Silicon N-Channel Power MOSFET CS9N90F A9D ○R General Description： CS9N90F A9HD the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-al

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FMH09N90E Super FAP-E3 series Features Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by

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AP09N90CW Advanced Power Electronics Corp. ▼ Minimize On-resistance ▼ Fast Switching ▼ Simple Drive Requirement N-CHANNEL ENHANCEMENT MODE POWER MOS

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FQA9N90C QFET FQA9N90C 900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using F

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N R N-CHANNEL MOSFET JCS9N90T MAIN CHARACTERISTICS Package ID VDSS Rdson-Max （Vgs=10V） Qg    LED 9A 900 V 1.35 Ω 43 nC APPLICATIONS 

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMP9N90/

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AP09N90W Advanced Power Electronics Corp. ▼ Repetitive Avalanche Rated ▼ Fast Switching ▼ Simple Drive Requirement N-CHANNEL ENHANCEMENT MODE POWER

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Advanced Power Electronics Corp. AP09N90CW-HF-3 N-channel Enhancement-mode Power MOSFET 100% Avalanche-Tested Simple Drive Requirement Fast Switchin

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Isc N-Channel MOSFET Transistor INCHANGE Semiconductor FMR09N90E ·FEATURES ·With TO-3PML package ·Low input capacitance and gate charge ·Low gate in

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor FMH09N90E ·FEATURES ·With TO-3PN packaging ·Low on-resistance ·Low drive current ·Easy to use

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N R N-CHANNEL MOSFET JCS9N90T MAIN CHARACTERISTICS Package ID VDSS Rdson-Max （Vgs=10V） Qg    LED 9A 900 V 1.35 Ω 43 nC APPLICATIONS 

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N R N-CHANNEL MOSFET JCS9N90T MAIN CHARACTERISTICS Package ID VDSS Rdson-Max （Vgs=10V） Qg    LED 9A 900 V 1.35 Ω 43 nC APPLICATIONS 

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Silicon N-Channel Power MOSFET ○R CS9N90F A9RD General Description： CS9N90F A9RD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the se

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N-Channel MOSFET Applications: • Adaptor • LCD Panel Power Features: • Lead Free • Low ON Resistance • Low Gate Charge • Low Crss(typical 12pF) • Imp

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N-Channel MOSFET Applications: • ATX Power • LCD Panel Power ISA09N90A Pb Lead Free Package and Finish VDSS 900V RDS(on)(Typ) ID (Max) 1.2Ÿ 9.0A

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMP9N90/

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMP9N90/

(7 views)