9N90-C Datasheet | Specifications & PDF Download

UNISONIC TECHNOLOGIES CO., LTD 9N90 9.0A, 900V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 9N90 uses UTC’s advanced proprietary, planar stripe, DMOS

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Silicon N-Channel Power MOSFET ○R CS9N90 ANHD General Description： CS9N90 ANHD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self

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Silicon N-Channel Power MOSFET ○R CS9N90F A9RD-G General Description： CS9N90F A9RD-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by th

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N-Channel MOSFET Applications: • Adaptor • LCD Panel Power Features: • Lead Free • Low ON Resistance • Low Gate Charge • Low Crss(typical 12pF) • Imp

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N-Channel MOSFET Applications: • Adaptor • LCD Panel Power Features: • Lead Free • Low ON Resistance • Low Gate Charge • Low Crss(typical 12pF) • Imp

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FMH09N90E Super FAP-E3 series Features Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by

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HiPerFETTM Power MOSFETs Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR

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N R N-CHANNEL MOSFET JCS9N90T MAIN CHARACTERISTICS Package ID VDSS Rdson-Max （Vgs=10V） Qg    LED 9A 900 V 1.35 Ω 43 nC APPLICATIONS 

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DG9N90 N N-CHANNEL ENHANCEMENT MODE MOSFET ：V1.0 General Description DG9N90N，， ，，，。 ，，。 DG9N90 is an N-channel enhancement mode MOSFET, which is

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N-Channel MOSFET Applications: • ATX Power • LCD Panel Power ISA09N90A Pb Lead Free Package and Finish VDSS 900V RDS(on)(Typ) ID (Max) 1.2Ÿ 9.0A

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Silicon N-Channel Power MOSFET CS9N90F A9D ○R General Description： CS9N90F A9HD the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-al

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FQP9N90C / FQPF9N90C — N-Channel QFET® MOSFET FQP9N90C / FQPF9N90C N-Channel QFET® MOSFET 900 V, 8.0 A, 1.4 Ω December 2013 Description This N-Chan

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N R N-CHANNEL MOSFET JCS9N90T MAIN CHARACTERISTICS Package ID VDSS Rdson-Max （Vgs=10V） Qg    LED 9A 900 V 1.35 Ω 43 nC APPLICATIONS 

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N R N-CHANNEL MOSFET JCS9N90T MAIN CHARACTERISTICS Package ID VDSS Rdson-Max （Vgs=10V） Qg    LED 9A 900 V 1.35 Ω 43 nC APPLICATIONS 

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TSA9N90MZ 900V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advan

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AP09N90CW Advanced Power Electronics Corp. ▼ Minimize On-resistance ▼ Fast Switching ▼ Simple Drive Requirement N-CHANNEL ENHANCEMENT MODE POWER MOS

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FQA9N90C-F109 — N-Channel QFET® MOSFET FQA9N90C-F109 N-Channel QFET® MOSFET 900 V, 9 A, 1.4 Ω Features • 9 A, 900 V, RDS(on) = 1.4 Ω (Max.) @ VGS = 1

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N R N-CHANNEL MOSFET JCS9N90T MAIN CHARACTERISTICS Package ID VDSS Rdson-Max （Vgs=10V） Qg    LED 9A 900 V 1.35 Ω 43 nC APPLICATIONS 

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N R N-CHANNEL MOSFET JCS9N90T MAIN CHARACTERISTICS Package ID VDSS Rdson-Max （Vgs=10V） Qg    LED 9A 900 V 1.35 Ω 43 nC APPLICATIONS 

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FQA9N90C_F109 — N-Channel QFET® MOSFET FQA9N90C_F109 N-Channel QFET® MOSFET 900 V, 9 A, 1.4 Ω Features • 9 A, 900 V, RDS(on) = 1.4 Ω (Max.) @ VGS = 1

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