A1015 Datasheet | Specifications & PDF Download

2SA1015(L) TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1015(L) Audio Frequency Amplifier Applications Low Noise Amplifier Applica

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors A1015 TRANSISTOR (PNP) TO—92 1.EMITTER FEATURES Power dis

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INTEGRATED CIRCUITS DATA SHEET TZA1015 Data amplifier and laser supply circuit for CD and read-only optical systems (HDALAS) Product specification Su

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PNP Epitaxial Silicon Transistor KSA1015 Features • Low−Frequency Amplifier • Collector−Base Voltage: VCBO = −50 V • Complement to KSC1815 • These De

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KSA1015 — PNP Epitaxial Silicon Transistor September 2015 KSA1015 PNP Epitaxial Silicon Transistor Features • Low-Frequency Amplifier • Collector-B

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2PA1015 PNP general purpose transistor Product specification Supersedes data of 1997 May 01

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www.DataSheet4U.com WJA1015 +5V Active-Bias InGaP HBT Gain Block Product Features • • • • • • • • 50 – 4000 MHz 14 dB Gain +19.5 dBm P1dB +35.5 dBm

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2SA1015(L) TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1015(L) Audio Frequency Amplifier Applications Low Noise Amplifier Applica

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PNP Epitaxial Silicon Transistor KSA1015 Features • Low−Frequency Amplifier • Collector−Base Voltage: VCBO = −50 V • Complement to KSC1815 • These De

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A1015 Plastic-Encapsulate Transistors(PNP) General description SOT-23 Plastic-Encapsulate Transistors(PNP) FEATURES • Complementary to C1815 • Power

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A1015 PNP Epitaxial Silicon Transistor LOW FREQUENCY AMPLIFIER Collection Dissipation : PC(max) = 400mW Collector-Emitter Voltage : VCEO = -50V Abs

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2PA1015 PNP general purpose transistor Product specification Supersedes data of 1997 May 01

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INTEGRATED CIRCUITS DATA SHEET TZA1015 Data amplifier and laser supply circuit for CD and read-only optical systems (HDALAS) Product specification Su

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PNP General Purpose Transistors P b Lead(Pb)-Free A1015 TO-92 1. EMITTER 1 2. COLLECTOR 3. BASE 2 3 MAXIMUM RATINGS* (TA=25°C unless otherwise n

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PNP Epitaxial Silicon Transistor KSA1015 Features • Low−Frequency Amplifier • Collector−Base Voltage: VCBO = −50 V • Complement to KSC1815 • These De

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UTC 2SA1015 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY PNP AMPLIFIER TRANSISTOR FEATURES *Collector-Emitter Voltage: BVCEO=-50V *Collector curre

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INTEGRATED CIRCUITS DATA SHEET TDA1015 1 to 4 W audio power amplifier Product specification File under Integrated Circuits, IC01 November 1982 Phili

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Continental Device India Limited www.DataSheet4U.com An ISO/TS16949 and ISO 9001 Certified Company PNP EPITAXIAL PLANAR SILICON TRANSISTOR CSA1015 T

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WJA1015 Product Features • • • • • • • • +5V Active-Bias InGaP HBT Gain Block Product Description The WJA1015 is a cascadable gain block that offers

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Elektronische Bauelemente A1015 -0.15A , -50V PNP Plastic-Encapsulated Transistor FEATURES Power Dissipation CLASSIFICATION OF hFE Product-Rank A10

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