A1202 Datasheet | Specifications & PDF Download

DSA12X2/3/4 High Performance Differential MEMS Oscillators for Automotive Features • Automotive AEC-Q100 Qualified • Any Frequency between 2.5 MHz an

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CXA1202Q-Z/CXA1202R REC/PB Amplifier for VCR For the availability of this product, please contact the sales office. Description CXA1202Q-Z/CXA1202R ar

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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1202 Power Amplifier Applications Voltage Amplifier Applications 2SA1202 Unit: mm • S

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A1202 and A1203 Continuous-Time Bipolar Switch Family FEATURES AND BENEFITS • AEC-Q100 automotive qualified • Continuous-time operation □ Fast power-

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MCP14A1201/2 12.0A MOSFET Driver with Low Threshold Input and Enable Features • AEC-Q100 Automotive Qualified, See Product Identification System • Hi

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PTVA120251EA Thermally-Enhanced High Power RF LDMOS FET 25 W, 50 V, 500 – 1400 MHz Description The PTVA120251EA LDMOS FET is designed for use in powe

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CXA1202Q-Z/CXA1202R REC/PB Amplifier for VCR For the availability of this product, please contact the sales office. Description CXA1202Q-Z/CXA1202R ar

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SMD Type Power Amplifier Applications 2SA1202 Transistors Features Suitable for Driver of 30 to 35 Watts Audio Amplifier Small Flat Package PC = 1 t

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Security & Wireless Devices •Security sensors and cameras •Wireless occupancy sensors driven by photovoltaic cells or battery to extend battery life.

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INTEGRATED CIRCUITS DATA SHEET TEA1202TS Battery power unit Objective specification File under Integrated Circuits, IC03 2000 Jun 08 Philips Semicon

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INTEGRATED CIRCUITS DATA SHEET TEA1202TS Battery power unit Objective specification File under Integrated Circuits, IC03 2000 Jun 08 Philips Semicon

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XRA1202/1202P 8-BIT I2C/SMBUS GPIO EXPANDER WITH RESET APRIL 2013 REV. 1.0.1 GENERAL DESCRIPTION The XRA1202/1202P is an 8-bit GPIO expander with a

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PTVA120252MT Thermally-Enhanced High Power RF LDMOS FET 25 W, 48 V, 500 – 1400 MHz Description The PTVA120252MT LDMOS FET is a 25-watt LDMOS FET desig

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TAI-SAW TECHNOLOGY CO., LTD. No. 3, Industrial 2nd Rd., Ping-Chen Industrial District, Taoyuan, 324, Taiwan, R.O.C. TEL: 886-3-4690038 FAX: 886-3-4697

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PTVA120251EA Thermally-Enhanced High Power RF LDMOS FET 25 W, 50 V, 500 – 1400 MHz Description The PTVA120251EA LDMOS FET is designed for use in pow

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SMBT 3906S PNP Silicon Switching Transistor Array • High DC current gain: 0.1mA to 100mA • Low collector-emitter saturation voltage • Two ( galvanic)

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XRA1202/1202P 8-BIT I2C/SMBUS GPIO EXPANDER WITH RESET APRIL 2013 REV. 1.0.1 GENERAL DESCRIPTION The XRA1202/1202P is an 8-bit GPIO expander with a

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