Ordering number : EN2006D 2SA1417 / 2SC3647 SANY.
Sanyo Semicon Device
2SA1417 - PNP / NPN Epitaxial Planar Silicon Transistor
Ordering number : EN2006D 2SA1417 / 2SC3647 SANYO Semiconductors DATA SHEET 2SA1417/2SC3647 PNP / NPN Epitaxial Planar Silicon Transistor High-Volt.
Sanyo
A1417 - 2SA1417
Ordering number : EN2006D 2SA1417 / 2SC3647 SANYO Semiconductors DATA SHEET 2SA1417/2SC3647 PNP / NPN Epitaxial Planar Silicon Transistor High-Volt.
ASI
MRA1417-2 - NPN SILICON RF POWER TRANSISTOR
MRA1417-2 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRA1417-2 is a Common Base Device Designed for Class C Power Amplifier Applications u.
ASI
MRA1417-11 - NPN SILICON RF POWER TRANSISTOR
MRA1417-11 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRA1417-11 is a Common Base Device Designed for Class C Power Amplifier Applications.
Kexin
2SA1417 - Transistor
SMD Type High-Voltage Switching Applications 2SA1417 Transistors Features Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current .
TY Semiconductor
2SA1417 - Transistor
SMD Type Product specification 2SA1417 Features Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity Absolute Maximum.
ON Semiconductor
2SA1417 - Bipolar Transistor
Ordering number : EN2006D 2SA1417/2SC3647 Bipolar Transistor (-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single PCP http://onsemi.com Features • Adoptio.
ASI
MRA1417-6H - NPN SILICON RF POWER TRANSISTOR
MRA1417-6H NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The MRA1417-6H is a Common Base Device Designed for Class C Amplifier Applications in L-Band.
