A1417 Datasheet | Specifications & PDF Download

MRA1417-6H NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The MRA1417-6H is a Common Base Device Designed for Class C Amplifier Applications in L-Band

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MRA1417-2 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRA1417-2 is a Common Base Device Designed for Class C Power Amplifier Applications u

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MRA1417-11 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRA1417-11 is a Common Base Device Designed for Class C Power Amplifier Applications

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Ordering number : EN2006D 2SA1417 / 2SC3647 SANYO Semiconductors DATA SHEET 2SA1417/2SC3647 PNP / NPN Epitaxial Planar Silicon Transistor High-Volt

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SMD Type High-Voltage Switching Applications 2SA1417 Transistors Features Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current

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Ordering number : EN2006D 2SA1417 / 2SC3647 SANYO Semiconductors DATA SHEET 2SA1417/2SC3647 PNP / NPN Epitaxial Planar Silicon Transistor High-Volt

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SMD Type Product specification 2SA1417 Features Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity Absolute Maximum

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Ordering number : EN2006D 2SA1417/2SC3647 Bipolar Transistor (-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single PCP http://onsemi.com Features • Adoptio

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