ADV-700 Datasheet | Specifications & PDF Download

Semiconductor SWITCHING REGURATOR APPLICATIONS Features • High Voltage: BVDSS=60V(Min.) • Low Crss : Crss=84pF(Typ.) • Low gate charge : Qg=26.7nC(Ty

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PT9700 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI PT9700 is Designed for High Power Class C Amplifier, in 225 to 400 MHz Military Communica

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plerowTM ALN1700 www.DataSheet4U.com Internally Matched LNA Module Description The plerowTM ALN-series is the compactly designed surface-mount module

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Advanced Power Electronics Corp. AP2N7002K-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Small Packag

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AMS3108 Micropower 700mA Low Noise Fast Transient Response LDO General Description The AMS3108 is a high performance linear regulator with very low

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MOSFET – Advanced Small-Signal 2N7000BU / 2N7000TA Description These N−channel enhancement mode field effect transistors are produced using onsemi’s

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NV6143C 700V Advanced GaNSlim Power IC NV6143C 1.Features • Integrated gate drive • 3.3V/5V/15V PWM logic input compatible • Programmable accurate G

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NV6145C 700V Advanced GaNSlim Power IC NV6145C 1. Features • Integrated gate drive • 3.3V/5V/15V PWM logic input compatible • Programmable accurate

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AT7316 700mA High Voltage Adjustable Current Regulator With Enable Control Immense Advance Tech. FEATURES     Wide Supply Voltage Range: 5V~50V.

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Advanced Power Electronics Corp. AP2N7002K-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement Small Package Outline Surface Mount

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AP2N7002K Pb Free Plating Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Small Package Outline ▼ Surface Mount Device ▼ RoHS C

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ADVANCED LINEAR DEVICES, INC. e TM EPAD ® ENAB L E D ALD310700A/ALD310700 PRECISION P-CHANNEL EPAD® MOSFET ARRAY QUAD ZERO THRESHOLD™ MATCHED P

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ADVANCED LINEAR DEVICES, INC. e TM EPAD ® ENAB L E D ALD310700A/ALD310700 PRECISION P-CHANNEL EPAD® MOSFET ARRAY QUAD ZERO THRESHOLD™ MATCHED P

Rating: 1 ★ (3 votes)

MOSFET – Advanced Small-Signal 2N7000BU / 2N7000TA Description These N−channel enhancement mode field effect transistors are produced using onsemi’s

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AP700D SILICON PIN DIODE DESCRIPTION: The AP700D is a Diffused Epitaxial Silicon PIN diode. PACKAGE STYLE 15 MAXIMUM RATINGS IC VCE PDISS TJ TSTG

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AP700C www.DataSheet4U.com SILICON PIN DIODE PACKAGE STYLE 15 DESCRIPTION: The AP700C is a Diffused Epitaxial Silicon PIN diode. MAXIMUM RATINGS I

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2N7000BU / 2N7000TA — Advanced Small-Signal MOSFET September 2016 2N7000BU / 2N7000TA Advanced Small-Signal MOSFET Features • Fast Switching Times

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2N7000BU / 2N7000TA — Advanced Small-Signal MOSFET September 2016 2N7000BU / 2N7000TA Advanced Small-Signal MOSFET Features • Fast Switching Times

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CdS Photoconductive Photocells www.DataSheet4U.com PDV-P7002 PACKAGE DIMENSIONS PACKAGE DIMENSIONS INCHINCH [mm] [mm] .249 [6.31] +.015 [0.38] -.010

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