Hitachi Semiconductor
HM51S4260C - 262144-word x 16-bit Dynamic Random Access Memory
HM514260C Series HM51S4260C Series
262,144-word × 16-bit Dynamic Random Access Memory
ADE-203-260A (Z) Rev. 1.0 Jun. 12, 1995
Description
The Hitach
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AMI Semiconductor
S10430 - Divider Keyer
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ON Semiconductor
AMIS-30621 - Micro-Stepping Motor Driver
AMIS-30621
Micro-Stepping Motor Driver
INTRODUCTION The AMIS−30621 is a single−chip micro−stepping motor driver
with position controller and control
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ON Semiconductor
AMIS-30660 - High Speed CAN Transceiver
AMIS-30660
High Speed CAN Transceiver
Description The AMIS−30660 CAN transceiver is the interface between a
controller area network (CAN) protocol c
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Oxford Semiconductor
OX16PCI954 - HIGH-PERFORMANCE UART FAMILY REFERENCE DRIVERS
www.DataSheet4U.com
OX16C95x OX16PCI954
HIGH-PERFORMANCE UART FAMILY
REFERENCE DRIVERS
This document describes installation and use of the Oxford Se
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Samsung Semiconductor
KM41C16000C - 16M x 1Bit CMOS Dynamic RAM
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KM41C16000C, KM41V16000C
CMOS DRAM
16M x1Bit CMOS Dynamic RAM with Fast Page Mode
DESCRIPTION
This is a family of 16,777,216 x
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AMI Semiconductor
S3528B - Programmable Low Pass Filter
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National Semiconductor
U120A - 120 Pin Ceramic Pin Grid Array
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U120A
June 1993
120 Pin Ceramic Pin Grid Array NS Package Number U120A
All dimensions are in inches (millimeters)
LIFE SUPPOR
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AMI SEMICONDUCTOR
AMIS-710227 - (AMIS-710227 /- AMIS-710229) 200dpi CIS Module
AMIS-710227, AMIS-710228, AMIS-710229: 200dpi CIS Module Data Sheet
1.0 General Description
The AMIS-710227 (PI227MC-A4), AMIS-710228 (PI228MC-A4) an
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Teridian Semiconductor
C3225Y5V1A105ZB - Ceramic Capacitors
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FEATURES • Pro
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Teridian Semiconductor
C3225Y5V1C105MB - Ceramic Capacitors
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FEATURES • Pro
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Oxford Semiconductor
OX16C95X - HIGH-PERFORMANCE UART FAMILY REFERENCE DRIVERS
www.DataSheet4U.com
OX16C95x OX16PCI954
HIGH-PERFORMANCE UART FAMILY
REFERENCE DRIVERS
This document describes installation and use of the Oxford Se
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Toshiba Semiconductor
TC5117400BSJ - DYNAMIC RAM
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TOSHIBA
TC5117400BSJ/BST-60/70
PRELIMINARY
4,194,304 WORD X 4 BIT DYNAMIC RAM
Description The TC5117400BSJ/BST is the new genera
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Samsung semiconductor
K4E660412E - (K4E640412E / K4E660412E) 16M x 4bit CMOS Dynamic RAM
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Industrial Temperature K4E660412E,K4E640412E CMOS DRAM
16M x 4bit CMOS Dynamic RAM with Extended Data Out
DESCRIPTION
This is a
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TriQuint Semiconductor
AM1 - High Dynamic Range Gain Block
AM1
High Dynamic Range Gain Block Product Features
60 – 3000 MHz 14 dB Gain 2.4 dB Noise Figure +39 dBm OIP3 Single +3.3 or +4.5 Supply
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ON Semiconductor
AMIS-30421 - Micro-Stepping Stepper Motor Bridge Controller
AMIS-30421
Micro-Stepping Stepper
Motor Bridge Controller
Introduction The AMIS−30421 is a micro-stepping stepper motor bridge
controller for large c
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National Semiconductor
LM1894 - Dynamic Noise Reduction System DNR
LM1894 Dynamic Noise Reduction System DNR
December 1994
LM1894 Dynamic Noise Reduction System DNR ®
General Description
The LM1894 is a stereo noise
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Siemens Semiconductor Group
HYB3116400BT-70 - 3.3V 4M x 4-Bit Dynamic RAM
3.3V 4M x 4-Bit Dynamic RAM
HYB3116400BJ/BT(L) -50/-60/-70 HYB3117400BJ/BT(L) -50/-60/-70
Advanced Information
• • •
4 194 304 words by 4-bit organ
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Siemens Semiconductor Group
HYB3165165AT-40 - 4M x 16-Bit Dynamic RAM
4M x 16-Bit Dynamic RAM (8k, 4k & 2k Refresh, EDO-Version)
Advanced Information
• • • •
HYB 3164165AT(L) -40/-50/-60 HYB 3165165AT(L) -40/-50/-60 HYB
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Samsung semiconductor
KM416V1200B - 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
KM416C1000B, KM416C1200B KM416V1000B, KM416V1200B
1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
DESCRIPTION
CMOS DRAM
This is a family of 1,048,57
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