AT-210 Datasheet | Specifications & PDF Download

FD2103 FD2103 FD2103 ， 、 N MOSFET， +180V 。 FD2103 （UVLO）， ，。 FD2103 ， ，。 180V  +180V  +1.0A/-1.0A  3.3V/5V  VCC（UVLO）     100ns DC

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SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER ABS201 - ABS210 FEATURES ▪ Glass Passivated Chip Junction ▪ Reverse Voltage - 100 to 1000 V ▪ Forward

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MS21042 / NAS1291 Series Specifications Nuts, Self-locking, 450°, Reduced Hexagon, Reduced Height, Ring Base, Non-Corrosion Resistant Steel 35 Size D

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FD2105 FD2105 FD2105 ，、 N MOSFET IGBT ，+40V 。 FD2105 VCC （UVLO）， ，。 FD2105 ， HO、LO 。 FD2105 ， 。 40V  +40V  ：3V~21V  ：+1.2A/-1.8A  3.3V/5

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Military-Fasteners.com MS21061L3 SELF-LOCKING NUTPLATE SPEC Description: Thread: 10-32, self locking, one lug floating, low height, cadmium plated,

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ME6210 500mA，Low Quiescent, Low Dropout LDO Linear Regulators General Description ME6210 series are low quiescent, low-dropout linear voltage regula

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GLASS PASSIVATED SURFACE MOUNT BRIDGE RECTIFIER FEATURES • Glass Passivated Chip Juntion • Reverse Voltage – 1000 V • Forward Current – 2A • High Surg

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MS21073 Nutplate Series Specifications 43 MATERIAL: Carbon steel per AMS 5085 (UNS G10500) FINISH: Cadmium plate per QQ-P-416, Type II, Class 2 and

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ABS20 thru ABS210 ABS Features ‧Ideal for printed circuit board ‧Reliable low cost construction utilizing molded plastic technique results in inexpens

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July 2005 www.DataSheet4U.com rev 0.3 ASM3P2107A Peak EMI Reducing Solution Features ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ FCC approved method of EMI attenuation. Generat

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Glass Passivated Bridge Rectifiers DF2005-G Thru. DF210-G Reverse Voltage: 50 to 1000V Forward Current: 2.0A RoHS Device Comchip SMD Diode Specialist

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IXZ210N50L & IXZ2210N50L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for Linea

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www.vishay.com VY2 Series Vishay BCcomponents EMI Suppression Safety Capacitor, Ceramic Disc, Class X1, 440 VAC, Class Y2, 300 VAC FEATURES • Compl

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UM2100 SERIES 2 Watt DC-DC Converters ♦ 24-Pin Dip Package ♦ High Efficiency (up to 80%) ♦ Regulated Outputs ♦ Pi Input Filter ♦ 3000 VDC Isolation ♦

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FC6A21060L Gate Resistor installed Dual N-Channel MOS FET For lithium-ion secondary battery protection circuit FC6A21060L Unit: mm „ Features y Low

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w w w .d e e h s a t a . u t4 m o c www.DataSheet4U.com

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July 2005 www.DataSheet4U.com rev 0.3 ASM3P2108A Peak EMI Reducing Solution Features ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ FCC approved method of EMI attenuation. Generat

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