AT202 Datasheet | Specifications & PDF Download

HAT2024R-VB HAT2024R-VB Datasheet Dual N-Channel 30-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.022 at VGS = 10 V 30 0.02

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HAT2028R/HAT2028RJ Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-524C (Z) 4th. Edition February 1999 Features • • • • For Automo

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HAT2028R, HAT2028RJ Silicon N Channel Power MOS FET High Speed Power Switching Features • For Automotive Application (at Type Code “J”) • Low on-resi

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HAT2020R Silicon N Channel Power MOS FET High Speed Power Switching Features • Low on-resistance • Capable of 4 V gate drive • Low drive current • Hi

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HAT2028R/HAT2028RJ Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-524C (Z) 4th. Edition February 1999 Features • • • • For Automo

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HAT2020R Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-439 J (Z) 11th. Edition February 1999 Features • • • • Low on-resistance

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HAT2028R, HAT2028RJ Silicon N Channel Power MOS FET High Speed Power Switching Features • For Automotive Application (at Type Code “J”) • Low on-resi

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HAT2022R Silicon N Channel Power MOS FET High Speed Power Switching Features • Low on-resistance • Capable of 4 V gate drive • Low drive current • Hi

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HAT2027R Silicon N Channel Power MOS FET High Speed Power Switching Features • Low on-resistance • Capable of 2.5 V gate drive • Low drive current •

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HAT2026R Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-523 C (Z) 4th. Edition February 1999 Features • • • • Low on-resistance C

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ANSALDO Ansaldo Trasporti s.p.a. Unita' Semiconduttori Via N. Lorenzi 8 - I 16152 GENOVA - ITALY Tel. int. +39/(0)10 6556549 - (0)10 6556488 Fax Int

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HAT2025R Silicon N Channel Power MOS FET High Speed Power Switching Features • High speed switching • Low on-resistance • Capable of 4 V gate drive •

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HAT2026R Silicon N Channel Power MOS FET High Speed Power Switching Features • Low on-resistance • Capable of 2.5 V gate drive • Low drive current •

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HAT2022R Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-440 J (Z) 11th Edition February 1999 Features • • • • Low on-resistance C

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ANSALDO Ansaldo Trasporti s.p.a. Unita' Semiconduttori Via N. Lorenzi 8 - I 16152 GENOVA - ITALY Tel. int. +39/(0)10 6556549 - (0)10 6556488 Fax Int

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HAT2024R Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-494 C (Z) 4th. Edition July 1997 Features • • • • Low on-resistance Capab

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HAT2025R Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-518C (Z) 4th. Edition February 1999 Features • • • • • High speed switchi

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HAT2029R Silicon N Channel Power MOS FET High Speed Power Switching Features • Low on-resistance • Capable of 2.5 V gate drive • Low drive current •

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HAT2029R Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-525D (Z) 5th. Edition February 1999 Features • • • • Low on-resistance Ca

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HAT2024RJ-VB HAT2024RJ-VB Datasheet Dual N-Channel 30-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.022 at VGS = 10 V 30 0.

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