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Laser Components
ADL-63102TL-3 - AlGaInP Visible Laser Diode
AlGaInP Visible Laser Diode ADL-63102TL-3 DATE：2006/06/29 Ver 1.0 ★635nm 10mW 50 oC Reliable Operation • Features 1. High visibility (10mW) 2. High te.
Laser Components
ADL-63102TR - AlGaInP Visible Laser Diode
AlGaInP Visible Laser Diode 2003/8 635nm 10mW 50 oC Reliable Operation • Features 1. Short wavelength: 635nm (Typ.) 2. High output power: 10mW CW 3. L.
Mitsubishi
ML1016R - a high power AlGaInP semiconductor laser
MITSUBISHI LASER DIODES ML1XX6 SERIES FOR OPTICAL INFORMATION SYSTEMS TYPE NAME ML1016R, ML120G6 FEATURES • High Power: 30mW (CW), 50mW (pulse) • V.
Mitsubishi Electric
ML101J22 - a high power AlGaInP semiconductor laser
www.DataSheet4U.com MITSUBISHI LASER DIODES ML1XX22 SERIES FOR OPTICAL INFORMATION SYSTEMS TYPE NAME ML101J22, ML120G22 FEATURES a high-power, high.
Marktech
LP377THR1-A0G - P4 AlGaInP Red Ultra Bright LED
P4 AlGaInP Red Ultra Bright LED LP377THR1−A0G Features Low Profile 4 Pin Plastic Package Water Clear Lens High Flux Output High Current Operation App.
Renesas
NDL3321ST - 650nm AlGaInP MQW VISIBLE LASER DIODE
DATA SHEET VISIBLE LASER DIODE NDL3321ST,NDL3321SU 5 mW, 650 nm AlGaInP MQW VISIBLE LASER DIODE FOR DVD, DVD-ROM APPLICATIONS DESCRIPTION t The NDL3.
ETC
708SRAP-R-AU-01 - AlGaInP Red LED chip
AlGaInP Red LED chip Features: (1) High luminous intensity (2) Long operation life (3) 100% probing test (4) Low driving current applications Characte.
USHIO
HL63101MG - AlGaInP Laser Diode
Data Sheet HL63101MG/102MG 638nm / 7mW AlGaInP Laser Diode Outline Internal Circuit Features • Optical output power: 5mW(CW) • Visible light output.
USHIO
HL63102MG - AlGaInP Laser Diode
Data Sheet HL63101MG/102MG 638nm / 7mW AlGaInP Laser Diode Outline Internal Circuit Features • Optical output power: 5mW(CW) • Visible light output.
USHIO
HL63290HD - AlGaInP Laser Diode
Data Sheet HL63290HD 638nm /2.2W (CW) /2.5W (Pulse) AlGaInP Laser Diode Outline φ9.0 +0 -0.025 1.0±0.1 + 0. 1 0.4 -0 (90o) (0.65) (0.25) Glass.
Mitsubishi
ML1012R - a high power AlGaInP semiconductor laser
ML1XX2 SERIES FOR OPTICAL INFORMATION SYSTEMS TYPE NAME ML1012R, ML1412R, ML120G2 FEATURES • High Power: 30mW (CW), 50mW (pulse) • Visible Light: 68.
Mitsubishi
ML101J8 - a high power AlGaInP semiconductor laser
MITSUBISHI LASER DIODES ML1XX8 SERIES FOR OPTICAL INFORMATION SYSTEMS TYPE NAME ML101J8, ML120G8 FEATURES • High Output Power: 40mW (CW) , 60mW (Pu.
Hitachi
HL6714G - AlGaInP Laser Diode
HL6714G AlGaInP Laser Diode ODE-208-192C (Z) Rev.3 Jan. 2003 Description The HL6714G is a 0.67 µm band AlGaInP index-guided laser diode with a multi-.
Hitachi
HL6323MG - AlGaInP Laser Diode
HL6323MG AlGaInP Laser Diode ADE-208-1410 (Z) 1st Edition Mar. 2001 Description The HL6323MG is a 0.63 µm band AlGaInP laser diode (LD) with a multi-.
Hitachi Semiconductor
HL6724MG - band AlGaInP laser diode
HL6724MG AlGaInP Laser Diode Description The HL6724MG is a 0.67 µm band AlGaInP laser diode with a multi-quantum well (MQW) structure. It is suitable.
Hitachi Semiconductor
HL6312G - (HL6312G / HL6313G) AlGaInP Laser Diodes
www.DataSheet4U.com HL6312/13G AlGaInP Laser Diodes Description The HL6312/13G are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW).
Hitachi Semiconductor
HL6313G - (HL6312G / HL6313G) AlGaInP Laser Diodes
www.DataSheet4U.com HL6312/13G AlGaInP Laser Diodes Description The HL6312/13G are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW).