B110 Datasheet | Specifications & PDF Download

ATB110x Datasheet Ver: 1.1 ATB110x Datasheet Latest Version: V1.1 Date: 2018-10-25 Copyright® 2018 Actions (Zhuhai) Technology Co., Ltd. All rights

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ATB110x Datasheet Ver: 1.1 ATB110x Datasheet Latest Version: V1.1 Date: 2018-10-25 Copyright® 2018 Actions (Zhuhai) Technology Co., Ltd. All rights

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AW-NB110H IEEE 802.11a/b/g/n WIFI with Bluetooth 4.0 class II Combo Single Chip Half Size Mini Module (NO WoW) Datasheet Version 1.0 0B January 7, 2

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2 PIR MOTION SENSORS Pyroelectric infrared motion sensors from Panasonic for optimal usability and reliability Panasonic develops and produces PIR m

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RMWB11001 www.DataSheet4U.com June 2004 RMWB11001 11 GHz Buffer Amplifier MMIC General Description The RMWB11001 is a 2-stage GaAs MMIC amplifier d

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www avantcom com tw AB1100 Bluetooth 3.0 Single Chip for HID Applications Preliminary Specification VERSION 0.30 15-Mar-2010 This document is commerc

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NVB110N65S3F MOSFET – Power, Single N-Channel, D2PAK 650 V, 110 mW, 30 A Description SUPERFET® III MOSFET is ON Semiconductor’s brand−new high voltage

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CEP110P03/CEB110P03 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -30V, -105.5A, RDS(ON) =5.8mΩ @VGS = -10V. RDS(ON) =8.

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SDBS12 THRU SDBS110 1.0 AMP. Schottky Barrier Rectifiers Voltage Range 20 to 100 Volts Current 1.0 Ampere Features Metal to silicon rectifier, majori

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AOT1100L/AOB1100L 100V N-Channel Rugged Planar MOSFET General Description The AOT1100L/AOB1100L uses a robust technology that is designed to provide

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AB102S-A THRU AB110S-A Single Phase 0.8AMP Surface Mount Glass Passivated Bridge Rectifiers ■ Features • Glass passivated die construction. • Low for

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AB102S THRU AB110S 1A Miniature Glass Passivated Single-Phase Surface Mount Bridge Rectifiers ■ Features • Rating to 1000V PRV. • Ideal for printed c

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SIDACtor® Protection Thyristors SLIC Protection Battrax® Series - Single Port Negative - MS-013 RoHS Pb e3 Agency Approvals Agency Agency File Num

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SB120-SB1100 SB120 - SB1100 Features • • 1.0 ampere operation at TA = 75°C with no thermal runaway. For use in low voltage, high frequency inverters

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SDBS12 THRU SDBS110 1.0 AMP. Schottky Barrier Rectifiers Voltage Range 20 to 100 Volts Current 1.0 Ampere Features Metal to silicon rectifier, majori

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Polar3TM HiPerFETTM Power MOSFET IXFB110N60P3 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Symbol VDSS VDGR VGSS VGSM ID25 I

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isc N-Channel MOSFET Transistor AOB1100L FEATURES ·Drain Current –ID= 130A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-

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VBFB1104N N-Channel 100 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) 100 RDS(on) () 0.036 at VGS= 10 V ID (A) 35 TO-251 D FEATURES •

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Semiconductor SDB110Q Schottky Barrier Diode Features • Low power rectified • Silicon epitaxial type • Battery changing diode Ordering Information

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