B1261-Z Datasheet | Specifications & PDF Download

DATA SHEET SILICON POWER TRANSISTOR 2SB1261-Z PNP SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SB1261-Z is designed for Audio Frequency Amplifier a

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2SB1261 Transistor(PNP) 1. BASE 1 2. COLLECTOR 3. EMITTER TO-252-2L Features — High hFE hFE=100 to 400 — Low vCE(sat) vCE(sat) ≤0.3V MAXIMUM RATIN

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TB1261F/TB1262F TOSHIBA BiCMOS INTEGRATED CIRCUIT, SILICON MONOLITHIC TB1261F/TB1262F PAL/NTSC/SECAM 1CHIP (IF + VCD PROCESSOR) The TB1261F/TB1262F a

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isc Silicon NPN Power Transistors DESCRIPTION ·Low Collector Saturation Voltage ·High Power Dissipation- : PC= 10W(Max)@TC=25℃ ·Complement to Type 2S

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2SB1261L Rev.E Mar.-2016 DATA SHEET / Descriptions TO-126F PNP 。Silicon PNP transistor in a TO-126F Plastic Package.  / Features hFE ，，。 Excel

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Transys Electronics L I M I T E D TO-252 Plastic-Encapsulate Transistors 2SB1261-Z FEATURES Power dissipation www.DataSheet4U.com TRANSISTOR (PNP) T

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2SB1261 Rev.E May.-2016 DATA SHEET / Descriptions TO-252 PNP 。Silicon PNP transistor in a TO-252 Plastic Package.  / Features hFE ，，。 Excelle

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 Plastic-Encapsulate Transistors 2SB1261 TRANSISTOR (PNP) TO – 252 FEATURES z Low VCE(sat)

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PNP PNP Epitaxial Silicon Transistor R 2SB1261 MAIN CHARACTERISTICS IC VCEO PC -3A -60V 2W  、 APPLICATIONS  Designed for Audio Frequency Am

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PNP Epitaxial Planar Silicon Transistors FEATURES z High hFE hFE=100 to 400. z Low VCE(sat0 VCE(sat)≤0.3V. Pb Lead-free Production specification 2S

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DATA SHEET SILICON POWER TRANSISTOR 2SB1261-Z PNP SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SB1261-Z is designed for Audio Frequency Amplifier a

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XL-MaxSonar® - EZ/AE™ Series XL-MaxSonar®- EZ™ Series High Performance Sonar Range Finder MB1200, MB1210, MB1220, MB1230, MB1240, MB1260, MB1261 MB1

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