B1366 Datasheet | Specifications & PDF Download

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate Transistors KTB1366 TRANSISTOR (PNP) FEATURES z Low Collector Satura

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KSB1366 KSB1366 LOW FREQUENCY POWER AMPLIFIER • Complement to KSD2012 1 TO-220F 2.Collector 3.Emitter 1.Base www.DataSheet4U.com PNP Epitaxial S

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SEMICONDUCTOR TECHNICAL DATA KTB1366 TRIPLE DIFFUSED PNP TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES Low Collector Saturation Voltage : VCE(sat

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KTB1366 Rev.F Mar.-2016 DATA SHEET / Descriptions TO-220F PNP 。Silicon PNP transistor in a TO-220F Plastic Package.  / Features ， KTD2058 。 L

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SEMICONDUCTOR TECHNICAL DATA FTB1366 FTB1366 TRANSISTOR (PNP) FEATURES Low VCE(sat): VCE(sat)=-1.0V(Max.)(IC/IB=-2A/-0.2A) Complementary to FTD2058

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isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·Collector Power Dissipation- : PC= 25 W@ TC

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KSB1366 KSB1366 LOW FREQUENCY POWER AMPLIFIER • Complement to KSD2012 PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless othe

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isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·Collector Power Dissipation- : PC= 25 W@ TC

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SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB1366 DESCRIPTION ·With TO-220F package ·Compleme

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isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·Collector Power Dissipation- : PC= 25 W@ TC

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