B601 Datasheet | Specifications & PDF Download

N-Channel 60-V (D-S) MOSFET B6010D General Description The B6010D is the N-Channel logic enhancement mode power field effect transistors are produce

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www.DataSheet4U.com DATA SHEET SILICON POWER TRANSISTOR 2SB601 PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMP

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FETek Technology Corp.  100% EAS Guaranteed  Green Device Available  Super Low Gate Charge  Excellent CdV/dt effect decline  Advanced high cell d

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SPM100GB601S1 2-PACK IGBT Module 100A 600V General Description IGBT power module provides ultra low conduction loss as well as short circuit ruggedn

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www.vishay.com VB60170G-E3 Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A T

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SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors DESCRIPTION ·With TO-220C package ·DARLINGTON ·High D

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Product Series Code File Version Established Date Latest Edit Date GBD GBD-V3R2 2009.07.24 2010.09.28 Brand Editor Description Pages GOTREND Teddy

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Product Series Code File Version Established Date Latest Edit Date GBD GBD-V3R2 2009.07.24 2010.09.28 Brand Editor Description Pages GOTREND Teddy

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www.vishay.com V60120C, VB60120C Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.41 V at IF =

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www.DataSheet4U.com DATA SHEET SILICON POWER TRANSISTOR 2SB601 PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMP

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Product Series Code File Version Established Date Latest Edit Date GBD GBD-V3R2 2009.07.24 2010.09.28 Brand Editor Description Pages GOTREND Teddy

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B6010S Single N-Channel 60-V (D-S) MOSFET General Description The B6010S is the Single N-Channel logic enhancement mode power field effect transistor

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N-Channel 60-V (D-S) MOSFET B6010K General Description The B6010K is the N-Channel logic enhancement mode power field effect transistors are produce

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KSB601 KSB601 Low Frequency Power Amplifier • Medium Speed Switching Industrial Use • Complement to KSD560 1 TO-220 2.Collector 3.Emitter 1.Base

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www.vishay.com VB60100C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.36 V at IF = 5 A TMBS

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Product Series Code File Version Established Date Latest Edit Date GBD GBD-V3R2 2009.07.24 2010.09.28 Brand Editor Description Pages GOTREND Teddy

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Ferrite EMI Chip Beads Features: • Up to 10 Amps (I MAX) continuous operating capability • Low DCR • Vibration Resistant • Rugged monolithic construct

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isc Silicon PNP Darlington Power Transistor 2SB601 DESCRIPTION ·High DC Current Gain- : hFE = 2000(Min)@ IC= -3A ·Collector-Emitter Sustaining Volta

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SB6, SBT6 SERIES Single Phase 6.0 AMPS. Silicon Bridge Rectifiers Voltage Range 50 to 1000 Volts Current 6.0 Amperes SBT-6 SB-6 Features a UL Rec

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www.vishay.com VB60100C-M3 Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.36 V at IF = 5 A T

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