www.DataSheet4U.com DATA SHEET SILICON POWER TRA.
NEC
B601 - 2SB601
www.DataSheet4U.com DATA SHEET SILICON POWER TRANSISTOR 2SB601 PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMP.
BiTEK
B6010D - N-channel MOSFET
N-Channel 60-V (D-S) MOSFET B6010D General Description The B6010D is the N-Channel logic enhancement mode power field effect transistors are produce.
SavantIC
2SB601 - SILICON POWER TRANSISTOR
SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors DESCRIPTION ·With TO-220C package ·DARLINGTON ·High D.
BiTEK
B6010S - Single N-channel MOSFET
B6010S Single N-Channel 60-V (D-S) MOSFET General Description The B6010S is the Single N-Channel logic enhancement mode power field effect transistor.
Unitpower
UB6015 - P-Ch 60V Fast Switching MOSFETs
UB6015 P-Ch 60V Fast Switching MOSFETs General Description The UB6015 is the highest performance trench P-ch MOSFETs with extreme high cell density , .
Premo
PSB6025 - (PSB6013 / PSB6025) SMD Power Inductors Shielded
www.DataSheet4U.com PSB0503 , PSB5028 , PSB6013 , PSB6025 , PSB8040 & PSB8058 SMD Power Inductors Shielded C/Severo Ochoa 33 – Parque Tecnológico de.
GOTREND
GBD160808PGZB601N - Multilayer Ferrite Chip Bead
Product Series Code File Version Established Date Latest Edit Date GBD GBD-V3R2 2009.07.24 2010.09.28 Brand Editor Description Pages GOTREND Teddy .
MATSUTA
TB201209B601 - TB201209B601
LED Displays Numeric 7-segment Single Digit Display 0.3” PART NO CHIP material LSD3211-XX LSD3212-XX LSD3214-XX LSD3215-XX LSD3213-XX LSD3221-XX LSD32.
SEMIPOWEREX
SPM100GB601S1 - 2-PACK IGBT Module
SPM100GB601S1 2-PACK IGBT Module 100A 600V General Description IGBT power module provides ultra low conduction loss as well as short circuit ruggedn.
TDK
MMZ1608B601CTAH0 - Chip beads
EMC Components Chip beads For general signal line MMZ series RoHS Cl Br REACH Halogen SVHC-Free Free Pb Lead Free MMZ1608 type FEATURES Noise redu.
Vishay
VB60100C-M3 - Dual High-Voltage Trench MOS Barrier Schottky Rectifier
www.vishay.com VB60100C-M3 Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.36 V at IF = 5 A T.
Fairchild Semiconductor
KSB601 - Low Frequency Power Amplifier
KSB601 KSB601 Low Frequency Power Amplifier • Medium Speed Switching Industrial Use • Complement to KSD560 1 TO-220 2.Collector 3.Emitter 1.Base .
Seoul Semiconductor
SSC-HB601 - LED DEVICE
*Customer: Pb Free SPECIFICATION ITEM MODEL Revision Date CHIP LED DEVICE SSC-HB601 [Contents] www.DataSheet4U.com 1. Features 2. Absolute maximu.
GOTREND
GBD201209PGB601N - Multilayer Ferrite Chip Bead
Product Series Code File Version Established Date Latest Edit Date GBD GBD-V3R2 2009.07.24 2010.09.28 Brand Editor Description Pages GOTREND Teddy .
GOTREND
GBD321611PGB601N - Multilayer Ferrite Chip Bead
Product Series Code File Version Established Date Latest Edit Date GBD GBD-V3R2 2009.07.24 2010.09.28 Brand Editor Description Pages GOTREND Teddy .
Laird
DA1206B601R-10 - Ferrite EMI Chip Beads
Ferrite EMI Chip Beads Features: • Up to 10 Amps (I MAX) continuous operating capability • Low DCR • Vibration Resistant • Rugged monolithic construct.
Taiwan Semiconductor
SB601G - Glass Passivated Bridge Rectifiers
SB6G, SBT6G SERIES Single Phase 6.0 AMPS. Glass Passivated Bridge Rectifiers Voltage Range 50 to 1000 Volts Current 6.0 Amperes SBT-6 SB-6 Featur.
EIC
STB6012 - SURFACE MOUNT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR
www.eicsemi.com TH97/2478 TH09/2479 IATF 0113686 SGS TH07/1033 STB606I - STB65G4 VBR : 6.8 - 440 Volts PPK : 600 Watts SURFACE MOUNT BIDIRECTIONA.
INCHANGE
2SB601 - PNP Transistor
isc Silicon PNP Darlington Power Transistor 2SB601 DESCRIPTION ·High DC Current Gain- : hFE = 2000(Min)@ IC= -3A ·Collector-Emitter Sustaining Volta.
Mitel Networks Corporation
MB6016 - Product Summary Prototyping Kits
® Product Summary Prototyping Kits OVERVIEW In order to support initial design and prototyping activities involving Mitel components, a number of an.