BD539 Datasheet | Specifications & PDF Download

isc Silicon NPN Power Transistor BD539D DESCRIPTION ·DC Current Gain - : hFE = 40(Min.)@ IC= 0.5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO=

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isc Silicon NPN Power Transistor BD539C DESCRIPTION ·DC Current Gain - : hFE = 40(Min.)@ IC= 0.5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO=

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isc Silicon NPN Power Transistor BD539A DESCRIPTION ·DC Current Gain - : hFE = 40(Min.)@ IC= 0.5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO=

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BD539, BD539A, BD539B, BD539C, BD539D NPN SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 q

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isc Silicon NPN Power Transistor BD539B DESCRIPTION ·DC Current Gain - : hFE = 40(Min.)@ IC= 0.5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO=

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isc Silicon NPN Power Transistor DESCRIPTION ·DC Current Gain - : hFE = 40(Min.)@ IC= 0.5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min)

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BD539, BD539A, BD539B, BD539C, BD539D NPN SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 q

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BD539, BD539A, BD539B, BD539C, BD539D NPN SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 q

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BD539, BD539A, BD539B, BD539C, BD539D NPN SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 q

(4 views)

BD539, BD539A, BD539B, BD539C, BD539D NPN SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 q

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