BI-POLAR Datasheet | Specifications & PDF Download

OP07 Very low offset single bipolar operational amplifier Features ■ Extremely low offset: 150µV/ max. ■ Low input bias current: 1.8nA ■ LOW Vio drif

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NE555 SA555 - SE555 General-purpose single bipolar timers Features ■ Low turn-off time ■ Maximum operating frequency greater than 500 kHz ■ Timing fr

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Product Folder Sample & Buy Technical Documents Tools & Software Support & Community Burr-Brown Audio OPA1612-Q1 SLOS931A – NOVEMBER 2015 – REVI

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NJW0281G (NPN) NJW0302G (PNP) Complementary NPN-PNP Power Bipolar Transistors These complementary devices are lower power versions of the popular NJ

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CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD1555 FOR LOW FREQUENCY R 3DD1555 MAIN CHARACTERISTICS BVCBO IC VCE(sat) tf 1500 V 5A 5 V(max) 1 s(max

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NE555 SA555 - SE555 General-purpose single bipolar timers Features ■ Low turn-off time ■ Maximum operating frequency greater than 500 kHz ■ Timing fr

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Bipolar Transistor 50 V, 2 A, Low VCE(sat), NPN Single 2SC5994 Features • Adoption of MBIT Process • Low Collector to Emitter Saturation Voltage • La

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Bipolar Transistor Description: The 2N3902 is a silicon NPN transistor in a TO-3 type Package designed for use in high voltage inverters, converters,

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2N3902 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) Bipolar NPN

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SS41F Low Gauss Bipolar Hall-effect Sensor DESCRIPTION The SS41F is a sensitive, bipolar Hall-effect sensor. This magnetic sensor offers reverse powe

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Product Folder Sample & Buy Technical Documents Tools & Software Support & Community OPA1611, OPA1612 SBOS450C – JULY 2009 – REVISED AUGUST 2014

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MJE13007 Switch-mode NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE13007 is designed for high−voltage, high−speed powe

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rfft APPLICATIOIU ; v dT ls8 lIIAME IC POWER GM4 PA3005 SILICONE MONOLITHIC BIPOLAR L I N E A RI C MODEL TYPE BLOCK DIAGRAM v FUNCTIONS Pin No

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UNISONIC TECHNOLOGIES CO., LTD U18 BIPOLAR LATCH TYPE HALL-EFFECT FOR HIGH-TEMPERARURE OPERATION DESCRIPTION U18 is a semiconductor integrated circuit

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A Product Line of Diodes Incorporated ZXTN26020DMF HIGH GAIN, LOW VCE(SAT) NPN BIPOLAR TRANSISTOR Features • High Gain Low Vcesat NPN transistor • Ve

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00818-002 Picoampere Input Current Quad Bipolar Op Amp AD704 FEATURES High dc precision 150 µV maximum offset voltage 1.5 µV/°C maximum offset volta

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