BR2 Datasheet | Specifications & PDF Download

R SCHOTTKY BARRIER DIODE HBR2045 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 20（2×10）A 45 V 175 ℃ 0.6V （@Tj=125℃）   APPLICAT

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Schottky Barrier Rectifier FEATURES ·Common Cathode Structure ·Low Power Loss/High Efficiency ·High Operating Junction Temperature ·Guarding for Overv

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R SCHOTTKY BARRIER DIODE HBR2040 MAIN CHARACTERISTICS IF(AV) VRRM Tj VF(max) 20（2×10）A 40 V 175 ℃ 0.6V （@Tj=125℃） z z APPLICATIONS z High f

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R SCHOTTKY BARRIER DIODE HBR2200 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 2A 200 V 175 ℃ 0.72V （@Tj=125℃）  、  APPLICATIONS

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MMBR2857 CASE 318-02/03, STYLE 6 SOT-23 (TO-236AA/AB) RF TRANSISTOR NPN SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Volta

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R SCHOTTKY BARRIER DIODE HBR20100 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 20（2×10）A 100 V 175 ℃ 0.7V （@Tj=125℃）   APPLIC

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MBR20L45CT Product profile Dual Common-Cathode Ultra Low VF Schottky Rectifier General description Rectifiers 20 Amp 45V Features • Guard ring for ove

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Z ibo Seno Electronic Engineering Co., Ltd. MBR2040CP-MBR20200CP 20.0A SCHOTTKY BARRIER DIODE Features Schottky Barrier Chip Ideally Suited for

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www.vishay.com MBR2045CT, MBR2060CT Vishay General Semiconductor Dual Common Cathode Schottky Rectifier TO-220AB MBR2045CT MBR2060CT 3 2 1 PIN 1

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MBR2080CT, MBR2090CT, MBR20100CT SWITCHMODE™ Power Rectifiers This series uses the Schottky Barrier principle with a platinum barrier metal. These sta

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