BR2 Datasheet | Specifications & PDF Download

R SCHOTTKY BARRIER DIODE HBR2045 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 20（2×10）A 45 V 175 ℃ 0.6V （@Tj=125℃）   APPLICAT

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www.vishay.com VS-MBRB25..CT-M3, VS-MBR25..CT-M3 Vishay Semiconductors High Performance Schottky Rectifier, 2 x 15 A 2 1 3 1 2 D2PAK (TO-263AB)

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MBR2060CT-MBR20100CT High-reliability discrete products and engineering services since 1977 20A SCHOTTKY RECTIFIERS FEATURES  Available as “HR” (h

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R SCHOTTKY BARRIER DIODE HBR20100 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 20（2×10）A 100 V 175 ℃ 0.7V （@Tj=125℃）   APPLIC

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VS-MBRB25..CTPbF, VS-MBR25..CT-1PbF Series Vishay High Power Products Schottky Rectifier, 2 x 15 A VS-MBRB25..CTPbF VS-MBR25..CT-1PbF Base common c

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SBR2060CT SBR2060CTF SBR2060CTI SBR2060CTB Using state-of-the-art SBR IC process technology, the following features are made possible in a single dev

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SBR20150CT-prel SBR20150CTI-prel SBR20150CTB-prel Using state-of-the-art SBR IC process technology, the following features are made possible in a sin

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VS-MBRB20 CTPbF, VS-MBR20 CT-1PbF Series Vishay High Power Products Schottky Rectifier, 2 x 10 A VS-MBRB20 CTPbF VS-MBR20 CT-1PbF Base com

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MMBR2857 CASE 318-02/03, STYLE 6 SOT-23 (TO-236AA/AB) RF TRANSISTOR NPN SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Volta

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R SCHOTTKY BARRIER DIODE HBR20100 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 20（2×10）A 100 V 175 ℃ 0.7V （@Tj=125℃）   APPLIC

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VS-MBR25 CTPbF Series, VS-MBR25 CT-N3 Series www.vishay.com Vishay Semiconductors Schottky Rectifier, 2 x 15 A Base 2 common cathode TO-220AB

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R SCHOTTKY BARRIER DIODE HBR20150S MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 20（2×10）A 150 V 175 ℃ 0.75V （@Tj=125℃）   APPL

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Suntan® Su® SKBPC25005/SBR25005 THRU SKBPC2516/SBR2516 SILICON/GLASS PASSIVATED THREE PHASE BRIDGE RECTIFIERS Voltage Range 50 to 1600 Volts Current

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Schottky Barrier Rectifier FEATURES ·Metal of silicon rectifier, majonty carrier conduction ·Guard ring for transient protection ·Low power loss high

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www.DataSheet4U.com SBR20100CT SBR20100CTF SBR20100CTI SBR20100CTB Using state-of-the-art SBR IC process technology, the following features are made

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STANDARD RECOVERY 1-PHASE SILICON BRIDGE RECTIFIERS SBR05 thru SBR30 January 16, 1998 TEL:805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com

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R SCHOTTKY BARRIER DIODE HBR2040 MAIN CHARACTERISTICS IF(AV) VRRM Tj VF(max) 20（2×10）A 40 V 175 ℃ 0.6V （@Tj=125℃） z z APPLICATIONS z High f

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R SCHOTTKY BARRIER DIODE HBR20150 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 20（2×10）A 150 V 175 ℃ 0.75V （@Tj=125℃） z z APPLICAT

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