BT2.0 Datasheet | Specifications & PDF Download

BATRON BT 240064 240 x 64 DOTS Graphic LCD Modules Dimensions [mm] I DESCRIPTION The BT 240064 is a supertwist dot matrix LCD module with graphics c

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Philips Semiconductors Product specification Thyristors logic level GENERAL DESCRIPTION Passivated, sensitive gate thyristor in a plastic envelope,

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Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH2N250 IXBT2N250 VCES = IC110 = VCE(sat)

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BT232-800D 4Q Triac Rev.01 - 09 January 2025 Product data sheet 1. General description Planar passivated very sensitive gate four quadrant triac in

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WNSC6D10650BT2-A Silicon Carbide Diode Rev.01 - 23 December 2022 Product data sheet 1. General description Silicon Carbide Schottky diode in a TO263

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BT258S-800LT SCR logic level, high temperature 5 September 2018 Product data sheet 1. General description Passivated sensitive gate Silicon Controll

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BT234W-800ET 4Q Triac Rev.01 - 09 January 2025 Product data sheet 1. General description Planar passivated sensitive gate four quadrant triac in a S

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BT232-800ET 4Q Triac Rev.01 - 09 January 2025 Product data sheet 1. General description Planar passivated sensitive gate four quadrant triac in a TO

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BT232W-800D 4Q Triac Rev.01 - 09 January 2025 Product data sheet 1. General description Planar passivated very sensitive gate four quadrant triac in

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Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBT22N300HV IXBH22N300HV VCES = IC110 = VCE(sat

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WNSC6D20650BT2-A Silicon Carbide Diode Rev.01 - 23 December 2022 Product data sheet 1. General description Silicon Carbide Schottky diode in a TO263

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WNSC6D30650BT2-A Silicon Carbide Diode Rev.01 - 22 March 2024 Product data sheet 1. General description Silicon Carbide Schottky diode in a TO263-2L

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Silicon FS Trench IGBT BT25T120 CKR ○R General Description： Using HUAJING's proprietary trench design, advanced FS(field stop) technology and integr

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INTEGRATED CIRCUITS 74ABT245 Octal transceiver with direction pin (3-State) Product specification Supersedes data of 1996 Sep 10 IC23 Data Handbook 1

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High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor Not for New Design IXBH20N300 IXBT20N300 VCES = IC110 = VCE(sat)  3000V 20A 3

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CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor MMBT2222A Spec. No. : C203N3 Issued Date : 2002.05.11 Revised Date : 2010.1

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Free Datasheet http://www.datasheet4u.com/ Free Datasheet http://www.datasheet4u.com/

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74ABT2952 Octal Registered Transceiver January 1992 Revised November 1999 74ABT2952 Octal Registered Transceiver General Description The ABT2952 is

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMBT2222; PMBT2222A NPN switching transistors Product specification Supersedes data of 1997

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MMBT2222/MMBT2222A GENERAL PURPOSE NPN TRANSISTORS FEATURES  HIGH DC CURRENT GAIN  EPITAXIAL PLANAR DIE CONSTRUCTION  COMPLEMENTARY PNP YTPE AVAILA

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