BT236-D Datasheet | Specifications & PDF Download

www.DataSheet4U.com Preliminary SemiWell Semiconductor Sensitive Gate Triacs Symbol BT236-D Features Repetitive Peak Off-State Voltage : 600V R.M.S

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www.DataSheet4U.com General Purpose Transistors COMCHIP SMD Diodes Specialist MMBT2369-G (NPN) RoHS Device Features -Power dissipation P C =0.3W 0.

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WILLAS FM120-M+ MMBT2369(A)LTTH1RU 1.0A SURSFAwCEitMcOhUNiTnSgCHTOTrTaKYnBsARisRItEoR RrEsCTIFIERS -20V- 200V FM1200-M+ SOD-123+ PACKAGE Pb Free

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MMBT2369 / MMBT2369A NPN Silicon Switching Transistor TO-236 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage

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MMBT2369 / PN2369 — NPN Switching Transistor MMBT2369 / PN2369 NPN Switching Transistor • This device is designed for high speed saturated switching

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NPN General Purpose Amplifier FEATURES z Epitaxial planar die construction. z Ultra-small surface mount package. Pb Lead-free APPLICATIONS z Use as

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NPN General Purpose Amplifier FEATURES z Epitaxial planar die construction. z Ultra-small surface mount package. Pb Lead-free Production specificat

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WILLAS FM120-M+ MMBT2369(A)LTTH1RU 1.0A SURSFAwCEitMcOhUNiTnSgCHTOTrTaKYnBsARisRItEoR RrEsCTIFIERS -20V- 200V FM1200-M+ SOD-123+ PACKAGE Pb Free

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TO-220F BT236X-600G 4Q Triac 1 May 2015 Product data sheet 1. General description Planar passivated four quadrant triac in a SOT186A full pack pl

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HI-SINCERITY MICROELECTRONICS CORP. HMBT2369 NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6834 Issued Date : 1998.02.01 Revised Date : 2004.09.07 Pa

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www.DataSheet4U.com MMBT2369LT1, MMBT2369ALT1 MMBT2369ALT1 is a Preferred Device Switching Transistors NPN Silicon Features http://onsemi.com COLLEC

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBT2369LT1/D Switching Transistors NPN Silicon 1 BASE COLLECTOR 3 MMBT2369LT1 MMBT2

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TO-220F BT236X-800G 4Q Triac 1 May 2015 Product data sheet 1. General description Planar passivated four quadrant triac in a SOT186A full pack pl

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MMBT2369A — NPN Switching Transistor November 2014 MMBT2369A NPN Switching Transistor Description This device is designed for high speed saturated s

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MMBT2369 / MMBT2369A MMBT2369 / MMBT2369A NPN Surface Mount Si-Epi-Planar Switching Transistors Si-Epi-Planar Schalttransistoren für die Oberfläche

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MMBT2369 / MMBT2369A NPN Silicon Switching Transistor TO-236 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage

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TO-220F BT236X-600F 4Q Triac 1 May 2015 Product data sheet 1. General description Planar passivated four quadrant triac in a SOT186A full pack pl

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MMBT2369A NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 15 Volts POWER 225 mWatts FEATURES • NPN epitaxial silicon, planar design • Collector-emitt

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