Bipolar-IC Datasheet | Specifications & PDF Download

Bipolar Transistor Description: The 2N3902 is a silicon NPN transistor in a TO-3 type Package designed for use in high voltage inverters, converters,

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MC4558 Wide bandwidth dual bipolar operational amplifier Features ■ Internally compensated ■ Short-circuit protection ■ Gain and phase match between

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NE555 SA555 - SE555 General-purpose single bipolar timers Features ■ Low turn-off time ■ Maximum operating frequency greater than 500 kHz ■ Timing fr

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2N3902 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) Bipolar NPN

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NE555 SA555 - SE555 General-purpose single bipolar timers Features ■ Low turn-off time ■ Maximum operating frequency greater than 500 kHz ■ Timing fr

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( DataSheet : www.DataSheet4U.com ) NPN ■■ ：、。 D13009 C B E ■■ （Ta=25℃） - - - ■■（Ta=25℃） - - - - - - - ■■ HFE(1) （Tc=25

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OP07 Very low offset single bipolar operational amplifier Features ■ Extremely low offset: 150µV/ max. ■ Low input bias current: 1.8nA ■ LOW Vio drif

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3DD13012 AN NPN ， ， ， ， 、 。 NPN 3DD13012 AN ○R ● ● ● ● ● ● ● ● VCEO IC Ptot（TC=25℃） 400 15 120 V A W TO-3P(N) -

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GT45F123 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT45F123 For PDP-TV Applications • • • • • 5th generation (trench gate stru

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MJE13007 Switch-mode NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE13007 is designed for high−voltage, high−speed powe

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MJE13007 Switch-mode NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE13007 is designed for high−voltage, high−speed powe

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NJW0281G (NPN) NJW0302G (PNP) Complementary NPN-PNP Power Bipolar Transistors These complementary devices are lower power versions of the popular NJ

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www.DataSheet.co.kr Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.k

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www.DataSheet4U.com NPN ■■ ：、。 D13005 C B E ■■ （Ta=25℃） - - - 　　 ■■（Ta=25℃） - - - - - - - ■■ HFE(1) 　　 （Tc=25℃） （Ta=25℃）

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BT40T60 ANFD ○R BT40T60 ANFD FS IGBT ， ，。 RoHS 。 ● FS ，； ● ：VCE(sat),TYP=1.8V @IC=40A,VGE=15V ； VCES IC Ptot （TC=25℃） VCE(sat) 600 40 280

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Ordering number : EN2086C 2SB1204 Bipolar Transistor –50V, –8A, Low VCE(sat), PNP Single TP/TP-FA http://onsemi.com Applications • Relay drivers,

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