C2233 Datasheet | Specifications & PDF Download

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- :VCEO= 60V(Min) ·DC Current Gain- : hFE= 30(Min)@ (VCE= 5V, IC= 1A

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RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION See Below for Part # TO-220 - Power Transistors and Darlingtons TO-220 4 12 3 Pin Config 1. Base 2.

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KSC2233 KSC2233 B/W TV Horizontal Deflection Output • Collector-Base Voltage : VCBO = 200V • Collector Current (DC) : IC = 4A • Collector Dissipation

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FEATURES ■ Sample Rate: 105Msps/80Msps ■ 61dB SNR up to 140MHz Input ■ 75dB SFDR up to 200MHz Input ■ 775MHz Full Power Bandwidth S/H ■ Single 3.3V Su

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DSC2133 DSC2233 Low-Jitter I2C/SPI Programmable Dual LVDS Oscillator Datasheet General Description The DSC2133 and DSC2233 series of programmable,

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SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) 2SC2233 TV HOR I ZONTAL DEFLECT I ON OUTPUT APPL I CAT I ONS. FEATURES: . Large Collector Current Cap

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2SC2233 Rev.F Mar.-2016 DATA SHEET / Descriptions TO-220 NPN 。Silicon NPN transistor in a TO-220 Plastic Package.  / Features ，。 Low Collecto

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Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company TO-220 Plastic Package CSC2233 CSC2233 NPN PLASTIC POWER TRANSISTOR T

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